Growth, photoluminescence, lifetime, and laser damage threshold studies of 1, 3, 5-triphenylbenzene (TPB) single crystal for scintillation application

• Published in: Applied physics. A, Materials science & processing Materials science & processing, 2020-06, Vol.126 (6), Article 459
• Main Authors: Murugesan, Manikandan, Paulraj, Rajesh, Perumalsamy, Ramasamy, Kumar, Maurya Kamlesh
• Format: Article
• Language: English
• Subjects: Applied physics; Characterization and Evaluation of Materials; Condensed Matter Physics; Crystal growth; Cut off wavelength; Laser damage; Machines; Manufacturing; Materials science; Nanotechnology; Optical and Electronic Materials; Optoelectronic devices; Photoluminescence; Physics; Physics and Astronomy; Processes; Scintillation; Single crystals; Surfaces and Interfaces; Thin Films; Toluene; Yield point
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-020-03578-3

The 1, 3, 5-triphenylbenzene (TPB) single crystal has been grown using slow cooling seed rotation technique. Optical transmittance of the grown crystal was obtained from UV–Visible analysis. The grown TPB crystal has good transmission in the entire visible region with a lower cutoff wavelength of 330 nm. The solubility of TPB material was determined using toluene as a solvent with different temperatures. The full width at half maximum is 18 arcsec, which indicates that the crystal is of good quality. The TPB crystal was excited ( λ exc ) at 307 nm, and the corresponding emission ( λ em ) has been observed at 352 nm. The laser-induced damage threshold (LDT) value of grown crystal is 1.25 GW/cm 2 . Third-order nonlinear optical susceptibility χ (3) is determined using the Z-scan technique as 3.07422 × 10 –09  esu. The TPB crystal proves its suitability for scintillation applications and optoelectronic device fabrications.