Characteristics of Poly-Si Junctionless FinFETs With HfZrO Using Forming Gas Annealing

In this study, an effective method was proposed to enhance the current drivability of junctionless field-effect transistors (JL-FETs) by utilizing ferroelectric effects. The ferroelectric layers were deposited on JL-FinFETs. The poly-Si junctionless FinFETs (JL-FinFETs) with HfZrO were successfully...

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Bibliographic Details
Published in:IEEE transactions on nanotechnology 2020, Vol.19, p.390-396
Main Authors: Chung, Sheng-Ti, Lee, Yao-Jen, Chao, Tien-Sheng
Format: Article
Language:English
Subjects:
Annealing
Capacitors
CMOS
ferroelectric
Ferroelectric materials
Ferroelectricity
Field effect transistors
FinFETs
forming gas annealing (FGA)
Junctionless field-effect-transistor (JL-FET)
Leakage currents
Logic gates
PMA
Semiconductor devices
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Summary:In this study, an effective method was proposed to enhance the current drivability of junctionless field-effect transistors (JL-FETs) by utilizing ferroelectric effects. The ferroelectric layers were deposited on JL-FinFETs. The poly-Si junctionless FinFETs (JL-FinFETs) with HfZrO were successfully fabricated and demonstrated. The subthreshold slope (S.S.) of JL-FinFETs with HfZrO was very sensitive to post-metal annealing (PMA) conditions and fin width. With PMA at 700 °C, steeper S.S. and I on /I off >10 7 could be obtained owing to the ferroelectric effect. JL-FinFETs with PMA at 700 °C possessed lower I off and offered the promise of higher integration flexibility for Si CMOS compatible process for future applications. Besides, the JL-FinFETs with forming gas annealing (FGA) had a small hysteresis and achieved the improved S.S.
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2020.2992797