On the thermal conductivity of single crystal AlN

Thermal conductivity κ ( T ) of single crystal aluminum nitride grown by physical vapor transport has been measured at temperatures T from 5 to 410 K. The samples exhibit high thermal conductivity with a value of up to 316 W m − 1 K − 1 at room temperature and about 2800 W m − 1 K − 1 at a peak of 6...

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Bibliographic Details
Published in:Journal of applied physics 2020-05, Vol.127 (20)
Main Authors: Inyushkin, A. V., Taldenkov, A. N., Chernodubov, D. A., Mokhov, E. N., Nagalyuk, S. S., Ralchenko, V. G., Khomich, A. A.
Format: Article
Language:English
Subjects:
Aluminum
Applied physics
Crystal defects
Crystal growth
Heat conductivity
Heat transfer
Low temperature
Phonons
Point defects
Room temperature
Scattering
Single crystals
Thermal conductivity
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Summary:Thermal conductivity κ ( T ) of single crystal aluminum nitride grown by physical vapor transport has been measured at temperatures T from 5 to 410 K. The samples exhibit high thermal conductivity with a value of up to 316 W m − 1 K − 1 at room temperature and about 2800 W m − 1 K − 1 at a peak of 66 K. At lowest temperatures, κ ( T ) approaches the conductivity limited by the diffuse phonon scattering from sample surfaces. The peculiarities in measured κ ( T ) suggest that the phonon scattering from point defects contributes essentially to the total phonon scattering in samples under investigation at low temperatures. The phonon interaction with electrons and holes bound to neutral donor and acceptor centers is suggested, adding substantially to thermal resistivity near and below the peak in κ ( T ).
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0008919