Electrical properties of Graphene/Silicon structure with Al2O3 interlayer

The electrical properties of the fabricated Al/Gr/Al 2 O 3 / p -Si structure have been analyzed using frequency-dependent capacitance/conductance–voltage ( C / G – V ) measurements. Graphene (Gr) nanosheets were grown on to copper (Cu) catalyst substrate, which has 99.99% purity, by Chemical Vapor D...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2020-06, Vol.31 (12), p.9719-9725
Main Authors: Kaymak, Nuriye, Bayram, Ozkan, Tataroğlu, Adem, Bilge Ocak, Sema, Oz Orhan, Elif
Format: Article
Language:English
Subjects:
Aluminum oxide
Bilayers
Characterization and Evaluation of Materials
Chemical vapor deposition
Chemistry and Materials Science
Copper
Depletion
Electrical properties
Frequency analysis
Graphene
Interlayers
Materials Science
Optical and Electronic Materials
Raman spectroscopy
Resistance
Silicon
Substrates
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Summary:The electrical properties of the fabricated Al/Gr/Al 2 O 3 / p -Si structure have been analyzed using frequency-dependent capacitance/conductance–voltage ( C / G – V ) measurements. Graphene (Gr) nanosheets were grown on to copper (Cu) catalyst substrate, which has 99.99% purity, by Chemical Vapor Deposition (CVD) technique, and then the Graphene was transferred on Al 2 O 3 / p -Si by the standard transfer process. The Graphene structures have been characterized by Raman Spectroscopy and Transmission Electron Microscopy (TEM) analyses, and the results of both analyses confirmed the monolayer/bilayer Graphene nanostructure. The forward and reverse bias G – V and C – V measurements of this structure have been performed in 10 kHz–400 kHz and at 300 K. The frequency dispersion in C and G can be evaluated for interface state density ( D it ) and series resistance ( R s ) values. The values of  D it and R s are dependent on frequency and increase with decreasing frequency. The R s - V graph shows a peak form at all frequencies in the depletion region and vanishes with increasing frequency. The obtained results suggest that the prepared structure can be used in electronic device applications.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-020-03517-1