Influence of Ni-Doping in ZnO Thin Films Coated on Porous Silicon Substrates and ZnO|PS Based Hetero-Junction Diodes

Ni 2+ -doped ZnO thin films were prepared for various Ni concentration on the porous silicon substrates. The residual stress in the ZnO thin film is relaxed with increase in the concentration of Ni. FESEM images show the growth of pillar-like nanostructures over the entire porous silicon substrates....

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2020-06, Vol.54 (6), p.634-640
Main Authors: Priya, V. L., Prithivikumaran, N.
Format: Article
Language:English
Subjects:
Dielectric films
Doping
Electric properties
Interfaces
Junction diodes
Magnetic Materials
Magnetism
Nickel
Photovoltaic cells
Physics
Physics and Astronomy
Porous silicon
Residual stress
Silicon
Silicon substrates
Surfaces
Thin Films
Zinc oxide
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Summary:Ni 2+ -doped ZnO thin films were prepared for various Ni concentration on the porous silicon substrates. The residual stress in the ZnO thin film is relaxed with increase in the concentration of Ni. FESEM images show the growth of pillar-like nanostructures over the entire porous silicon substrates. The variation of resistivity due to UV illumination was observed for the Ni-doped ZnO thin films. Ideality factor value is less for the ZnO:Ni|PS hetero-junction diode than ZnO|PS hetero-junction, Ni doping in ZnO improves the rectifying behavior.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782620060135