Comprehensive Compact Phenomenological Modeling of Integrated Metal-Oxide Memristors

We present a comprehensive phenomenological model for the crossbar integrated metal-oxide continuous-state memristors. The model consists of static and dynamic equations, which are obtained by fitting a large amount of experimental data, collected on several hundred devices. Model describes the aver...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on nanotechnology 2020, Vol.19, p.344-349
Main Authors: Nili, Hussein, Vincent, Adrien F., Prezesio, Mirko, Mahmoodi, Mohammad R., Kataeva, Irina, Strukov, Dmitri B.
Format: Article
Language:English
Subjects:
compact memristor model
Computational modeling
Computer simulation
Current voltage characteristics
Data models
Image classification
Image compression
Mathematical model
Mathematical models
memristive crossbars
Memristor
Memristors
Metal oxides
modeling
Modelling
phenomenological memristor model
ReRAM
Solid modeling
Temperature measurement
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We present a comprehensive phenomenological model for the crossbar integrated metal-oxide continuous-state memristors. The model consists of static and dynamic equations, which are obtained by fitting a large amount of experimental data, collected on several hundred devices. Model describes the average devices' I-V characteristics as well as their spatial (device-to-device) and temporal variations. Both static and dynamic equations are explicit, computationally inexpensive, and suitable for SPICE modeling. The model's predictive power is validated using experimental data, while its utility by simulating image compression and image classification applications, two practical representative applications of mixed-signal memristor-based hardware.
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2020.2982128