Spin pumping and inverse spin Hall effect in iridium oxide

Large charge-to-spin conversion (spin Hall angle) and spin Hall conductivity are prerequisites for development of next generation power efficient spintronic devices. In this context, heavy metals (e.g. Pt, W etc.), topological insulators, antiferromagnets are usually considered because they exhibit...

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Bibliographic Details
Published in:arXiv.org 2020-09
Main Authors: Sahoo, Biswajit, Roy, Koustuv, Gupta, Pushpendra, Satpati, Biswarup, Singh, Braj B, Bedanta, Subhankar
Format: Article
Language:English
Subjects:
Antiferromagnetism
Electromagnetism
Ferromagnetic resonance
Ferromagnetism
Hall effect
Heavy metals
Iridium
Pumping
Spin-orbit interactions
Topological insulators
Transition metal oxides
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Summary:Large charge-to-spin conversion (spin Hall angle) and spin Hall conductivity are prerequisites for development of next generation power efficient spintronic devices. In this context, heavy metals (e.g. Pt, W etc.), topological insulators, antiferromagnets are usually considered because they exhibit high spin-orbit coupling (SOC). In addition to the above materials, 5d transition metal oxide e.g. Iridium Oxide (IrO 2 ) is a potential candidate which exhibits high SOC strength. Here we report a study of spin pumping and inverse spin Hall effect (ISHE), via ferromagnetic resonance (FMR), in IrO 2 /CoFeB system. We identify the individual contribution of spin pumping and other spin rectification effects in the magnetic layer, by investigating the in-plane angular dependence of ISHE signal. Our analysis shows significant contribution of spin pumping effect to the ISHE signal. We show that polycrystalline IrO 2 thin film exhibits high spin Hall conductivity and spin Hall angle which are comparable to the values of Pt.
ISSN:2331-8422