The impact of semimetal nanoparticles on the conduction of thick glass layer at Ag/Si contact interface

• Published in: Journal of applied physics 2020-06, Vol.127 (22)
• Main Authors: Ren, Keming, Han, Dan, Ye, Tang, Zhang, Yong, Ebong, Abasifreke
• Format: Article
• Language: English
• Subjects: Applied physics; Atomic force microscopes; Atomic force microscopy; Carrier transport; Conductivity; Contact resistance; Electron microscopes; Emitters; Emitters (electron); Glass; Microscopy; Nanoparticles; Photovoltaic cells; Raman spectroscopy; Silicon; Silver; Solar cells; Spectrum analysis; Thickness
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/5.0001488

This paper reports on the ohmic contact formed by the conductive glass layer found at the interface of Ag/Si contacts on lowly doped emitter silicon solar cells due to the presence of semimetal nanoparticles. The scanning electron microscopy and scanning transmission electron microscope analyses revealed an interface glass layer (IGL) thickness of greater than 380 nm, which was enriched with micro-sized alloys composed of semimetal nanoparticles. This IGL was conductive as confirmed by conductive atomic force microscopy (C-AFM). The presence of these semimetal nanoparticles, identified as Ag 2Te and PbTe, was both endowed with low bandgap energies as confirmed by Raman spectroscopy and energy dispersive x-ray spectroscopy. These semimetal nanoparticles were found only in the IGL and formed a “bridge” to connect the Ag gridline and Si emitter for carrier transport. Based on the modified Fowler–Nordheim tunneling process, the modeled C-AFM I–V characteristic curve showed a barrier height of 0.1 eV corresponding to an IGL thickness of only 18 nm. Thus, the carrier transport mechanism “through the conductive bridge” was formed by the semimetal nanoparticles embedded in the IGL. Therefore, the high conductivity of the interface glass led to the specific contact resistance to be independent of the emitter peak doping concentration.