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The relaxation of electrophysical properties HgCdTe epitaxial films affected by plasma of high frequency nanosecond volume discharge in atmospheric-pressure air

In this work the results of the experimental investigation of the influence of the high-frequency nanosecond volume discharge in atmospheric pressure air on the electrophysical properties of epitaxial HgCdTe films are presented. Analysis of magnetic-field dependences of the Hall coefficient have sho...

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Bibliographic Details
Published in:Surface & coatings technology 2020-04, Vol.387, p.125527-5, Article 125527
Main Authors: Korotaev, A.G., Grigoryev, D.V., Voitsekhovskii, A.V., Lozovoy, K.A., Tarasenko, V.F., Ripenko, V.S., Shulepov, M.A., Erofeev, M.V., Yakushev, M.V., Dvoretskii, S.A., Mikhailov, N.N., Varavin, V.S.
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Language:English
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Summary:In this work the results of the experimental investigation of the influence of the high-frequency nanosecond volume discharge in atmospheric pressure air on the electrophysical properties of epitaxial HgCdTe films are presented. Analysis of magnetic-field dependences of the Hall coefficient have shown that in the near-surface region of the material a high-conductivity n-type layer is formed as a result of irradiation. It is shown that relaxation of the values of the electrophysical parameters of the epitaxial films is observed after the irradiation. The supposition is made that the obtained experimental results may be explained by the formation of thin dielectric oxide film at the surface of the irradiated material, containing built-in fixed and mobile positive charge. [Display omitted] •The influence of volume discharge on properties of HgCdTe films is investigated.•The magnetic-field dependences of Hall coefficient are considered.•The relaxation of values of electrophysical parameters of samples is observed.•The model of change of electrophysical parameters of HgCdTe films is proposed.
ISSN:0257-8972
1879-3347
DOI:10.1016/j.surfcoat.2020.125527