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The relaxation of electrophysical properties HgCdTe epitaxial films affected by plasma of high frequency nanosecond volume discharge in atmospheric-pressure air
In this work the results of the experimental investigation of the influence of the high-frequency nanosecond volume discharge in atmospheric pressure air on the electrophysical properties of epitaxial HgCdTe films are presented. Analysis of magnetic-field dependences of the Hall coefficient have sho...
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Published in: | Surface & coatings technology 2020-04, Vol.387, p.125527-5, Article 125527 |
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Main Authors: | , , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | In this work the results of the experimental investigation of the influence of the high-frequency nanosecond volume discharge in atmospheric pressure air on the electrophysical properties of epitaxial HgCdTe films are presented. Analysis of magnetic-field dependences of the Hall coefficient have shown that in the near-surface region of the material a high-conductivity n-type layer is formed as a result of irradiation. It is shown that relaxation of the values of the electrophysical parameters of the epitaxial films is observed after the irradiation. The supposition is made that the obtained experimental results may be explained by the formation of thin dielectric oxide film at the surface of the irradiated material, containing built-in fixed and mobile positive charge.
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•The influence of volume discharge on properties of HgCdTe films is investigated.•The magnetic-field dependences of Hall coefficient are considered.•The relaxation of values of electrophysical parameters of samples is observed.•The model of change of electrophysical parameters of HgCdTe films is proposed. |
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ISSN: | 0257-8972 1879-3347 |
DOI: | 10.1016/j.surfcoat.2020.125527 |