Surface State Variation during Scanning in a Low-Voltage SEM and Its Effect on of Relief Structure Sizes

The variation of low-energy slow secondary electron emission from the surface of relief structures (bumps) during their prolonged scanning in a low-voltage scanning electron microscope is estimated. The variation nature depends on the bump region profile, which is especially complex near relief stru...

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Bibliographic Details
Published in:Physics of the solid state 2020-06, Vol.62 (6), p.1078-1084
Main Authors: Larionov, Yu. V., Ozerin, Yu. V.
Format: Article
Language:English
Subjects:
Angles (geometry)
Contamination
Deposition
Electric potential
Electric waves
Electromagnetic radiation
Electromagnetic waves
Electron emission
Food habits
Ionizing radiation
Low-Dimensional Systems
Physics
Physics and Astronomy
Solid State Physics
Video signals
Voltage
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Summary:The variation of low-energy slow secondary electron emission from the surface of relief structures (bumps) during their prolonged scanning in a low-voltage scanning electron microscope is estimated. The variation nature depends on the bump region profile, which is especially complex near relief structure angles. As a result, corresponding curve portions of the bump video signal, which results in an increase or even a decrease in geometrical sizes of these portions. The emission variation is explained by local charge induction in the natural oxide layer on the silicon surface. The portion size also changes due to contamination film bump deposition on the surface. Presumably, its deposition depends on charges induced on the bump surface and, hence, is poorly reproducible. The case of the absence of contamination broadening of a bump due to its prolonged scanning is fixed.
ISSN:1063-7834
1090-6460
DOI:10.1134/S106378342006013X