A 300GHz power‐combined frequency doubler based on E‐plane 90°‐hybrid and Y‐junction

In this article, a 300 GHz power‐combined frequency doubler using two chips in a single waveguide block is developed to acheive high power handling capability. Each doubler chip integrated with six diodes on a 5‐μm‐thick GaAs membrane is manufactured by the LERMA‐C2N Schottky process. In the power c...

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Bibliographic Details
Published in:Microwave and optical technology letters 2020-08, Vol.62 (8), p.2683-2691
Main Authors: Jiang‐Qiao Ding, Maestrini, Alain, Gatilova, Lina, Sheng‐Cai Shi
Format: Article
Language:English
Subjects:
Bandwidths
Frequency doublers
Waveguides
Online Access:Get full text
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Summary:In this article, a 300 GHz power‐combined frequency doubler using two chips in a single waveguide block is developed to acheive high power handling capability. Each doubler chip integrated with six diodes on a 5‐μm‐thick GaAs membrane is manufactured by the LERMA‐C2N Schottky process. In the power combining architecture, the input wave is split into two paths with a 90° relative phase shift by using a 90° hybrid coupler, and the in‐phase E‐field power combining between the output ports is provided by an E‐plane Y‐junction. This doubler can enjoy comparable performance of bandwidth and efficiency as the single‐chip version except with the twice input power handling. Partial results including ~8 mW output power and ~15% efficiency have been delivered in the band of 260‐310 GHz when pumping with 20‐60 mW input power, which indicates that this dual‐chip doubler can work availably. Such E‐plane power‐combined doubler can be further served to drive high‐power terahertz multiplier chains, and also pump multipixel heterodyne detectors.
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.32146