Thermolytic Deposition of MoS2 Nanolayer for Si Solar Cell Applications

• Published in: Physica status solidi. A, Applications and materials science Applications and materials science, 2020-06, Vol.217 (12), p.n/a
• Main Authors: Satha, Suresh, Sahu, Rajkumar, Mun, Jonghun, Kim, Keunjoo
• Format: Article
• Language: English
• Subjects: Aluminum; Annealing; Contact resistance; Crystal structure; Crystallinity; Deposition; Heterojunctions; heterostructures; Molybdenum disulfide; MoS2; Photovoltaic cells; Quantum efficiency; silicon; Silicon substrates; Solar cells; thermolysis
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.201900993

The thermolytic deposition of MoS2 nanolayers for use in Si solar cells is investigated for which a thin MoS2 nanolayer is grown on a crystalline Si substrate by the thermolysis method. The deposited MoS2 nanolayer and Si substrate are annealed and show a transition from an amorphous to a crystalline phase as the annealing temperature increases. The MoS2 (002) crystalline peak at 14.04° appears at an annealing temperature of 450 °C. The heterojunction interface of MoS2/np‐Si shows a mixed amorphous and crystalline phase. The Al/MoS2 has better Ohmic contact compared with Al/Si. The MoS2 nanolayer is introduced into the cell structure of a SiNx/a‐Si(n)/MoS2/np‐Si cell, the cell shows a photoconversion efficiency of 11.47%. The thermolytic deposition is investigated for a large scale and direct synthesis of a MoS2 nanolayer on micro‐pyramidal p‐Si wafers for solar cell application. The MoS2 nanolayer shows a transition from an amorphous to a crystalline phase after the annealing process. The MoS2 based heterostructures in p‐Si photovoltaic devices produce the photoconversion efficiencies of up to 11.47%.