Active matrix QD‐LED with top emission structure by UV lithography for RGB patterning

We have developed full colour top emitting quantum dot light‐emitting diode (QD‐LED) display driven by a 176‐ppi active matrix of metal oxide thin‐film transistors. Red, green and blue (RGB) QD‐LED subpixel emission layers are patterned by our original UV photolithography process and materials. We a...

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Bibliographic Details
Published in:Journal of the Society for Information Display 2020-06, Vol.28 (6), p.499-508
Main Authors: Nakanishi, Yohei, Takeshita, Tomohiro, Qu, Yang, Imabayashi, Hiroki, Okamoto, Shota, Utsumi, Hisayuki, Kanehiro, Masayuki, Angioni, Enrico, Boardman, Edward A., Hamilton, Iain, Zampetti, Andrea, Berryman‐Bousquet, Valerie, Smeeton, Tim M., Ishida, Takeshi
Format: Article
Language:English
Subjects:
active matrix
Emission
Light emitting diodes
Metal oxides
Photolithography
QD‐LED
quantum dot light‐emitting diode displays
Quantum dots
top emission
Transistors
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Summary:We have developed full colour top emitting quantum dot light‐emitting diode (QD‐LED) display driven by a 176‐ppi active matrix of metal oxide thin‐film transistors. Red, green and blue (RGB) QD‐LED subpixel emission layers are patterned by our original UV photolithography process and materials. We also demonstrate the potential to achieve high resolution such as 528 ppi using this process. We have developed full colour top emitting quantum dot light‐emitting diode (QD‐LED) display driven by a 176‐ppi active matrix of metal oxide thin‐film transistors. Red, green and blue QD‐LED subpixel emission layers are patterned by our original UV photolithography process and materials. We also demonstrate the potential to achieve high resolution such as 528 ppi using this process.
ISSN:1071-0922
1938-3657
DOI:10.1002/jsid.910