Controllable Functional Layer and Temperature-Dependent Characteristic in Niobium Oxide Insulator-Metal Transition Selector

The niobium oxide insulator-metal transition selector device is considered to be a rectifying device with great potential. However, the lack of research on the experimental parameters and the complex physical mechanism of the NbO 2 device seriously affected its development. In this article, a contro...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2020-07, Vol.67 (7), p.2771-2777
Main Authors: Zhang, Ziqi, Chen, Ao, Ma, Guokun, He, Yuli, Lin, Chih-Yang, Lin, Chun-Chu, Wang, Hao, Chang, Ting-Chang
Format: Article
Language:English
Subjects:
Computer simulation
Electrodes
Hysteresis
Insulator–metal transition (IMT)
Interlayers
niobium oxide selector
Niobium oxides
Parameters
Performance evaluation
Room temperature
Stability
Switches
Switching
Temperature
Temperature dependence
temperature-dependent
threshold switching (TS)
Threshold voltage
Voltage measurement
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Summary:The niobium oxide insulator-metal transition selector device is considered to be a rectifying device with great potential. However, the lack of research on the experimental parameters and the complex physical mechanism of the NbO 2 device seriously affected its development. In this article, a controllable intermediate functional layer of NbO x was reported in the Pt/NbO x /TiN device subjected to different forming compliance currents (FCCs) and compliance currents (CCs). The different FCCs and CCs changed the size of the Nb 2 O 5 and NbO 2 layers within the NbO x layer, which further affected the threshold voltage. The result helped to realize the control of the NbO x functional layer, which was also of great significance for the adjustment of the experimental parameters in the preparation experiment according to the required performance. Furthermore, the {I}-{V} characteristics and switching times at different ambient temperatures were carried out, showing the specific dependency of the device on temperature. Between them, the simulated switching time of 2 ns at room temperature proved that the selector had a great application prospect in high speed and high-density storage or logic switch. Generally, the whole research helped to improve the control of the interlayer structure and the performance of the device for application in 3-D crossbar arrays, and provided a valid model to study the device.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2020.2993771