The role of rare-earth metal (Y, Ru and Cs)-doped ZnO thin films in NH3 gas sensing performances at room temperature

• Published in: Journal of materials science. Materials in electronics 2020-07, Vol.31 (13), p.10084-10095
• Main Authors: Sarf, Fatma, Karaduman Er, Irmak, Yakar, Emin, Acar, Selim
• Format: Article
• Language: English
• Subjects: Ammonia; Cesium; Characterization and Evaluation of Materials; Chemistry and Materials Science; Gas sensors; Image detection; Materials Science; Mathematical analysis; Morphology; Optical and Electronic Materials; Rare earth elements; Room temperature; Ruthenium; Substrates; Thin films; Tin dioxide; Yttrium; Zinc oxide
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-020-03554-w

Pure and rare-earth metal [Yttrium (Y), Ruthenium (Ru) and Caesium (Cs)]-doped ZnO thin films were deposited onto In-doped SnO 2 substrates by chemical bath deposition. The present study detailed investigated the effect of rare-earth metal-doped ZnO on NH 3 gas sensing. X-ray diffraction analysis indicated that the incorporated rare-earth metal ions substitute Zn sites in the ZnO lattice. Dimension of ZnO films decreased with rare-earth metal doping which detected from surface morphology images. The response of 100 ppb NH 3 gas was calculated to be 0.80 (200 °C), 14.00 (90 °C), 17.00 (50 °C), and 10.00 (120 °C) for the pure, Y-, Ru-, and Cs-doped ZnO films, respectively. In addition, the response of 15 ppm NH 3 gas at room temperature was calculated to be 0.20, 27.00, 57.00, and 18.00 for undoped Y-, Ru-, and Cs-doped ZnO films, respectively.