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The role of rare-earth metal (Y, Ru and Cs)-doped ZnO thin films in NH3 gas sensing performances at room temperature
Pure and rare-earth metal [Yttrium (Y), Ruthenium (Ru) and Caesium (Cs)]-doped ZnO thin films were deposited onto In-doped SnO 2 substrates by chemical bath deposition. The present study detailed investigated the effect of rare-earth metal-doped ZnO on NH 3 gas sensing. X-ray diffraction analysis in...
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Published in: | Journal of materials science. Materials in electronics 2020-07, Vol.31 (13), p.10084-10095 |
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creator | Sarf, Fatma Karaduman Er, Irmak Yakar, Emin Acar, Selim |
description | Pure and rare-earth metal [Yttrium (Y), Ruthenium (Ru) and Caesium (Cs)]-doped ZnO thin films were deposited onto In-doped SnO
2
substrates by chemical bath deposition. The present study detailed investigated the effect of rare-earth metal-doped ZnO on NH
3
gas sensing. X-ray diffraction analysis indicated that the incorporated rare-earth metal ions substitute Zn sites in the ZnO lattice. Dimension of ZnO films decreased with rare-earth metal doping which detected from surface morphology images. The response of 100 ppb NH
3
gas was calculated to be 0.80 (200 °C), 14.00 (90 °C), 17.00 (50 °C), and 10.00 (120 °C) for the pure, Y-, Ru-, and Cs-doped ZnO films, respectively. In addition, the response of 15 ppm NH
3
gas at room temperature was calculated to be 0.20, 27.00, 57.00, and 18.00 for undoped Y-, Ru-, and Cs-doped ZnO films, respectively. |
doi_str_mv | 10.1007/s10854-020-03554-w |
format | article |
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2
substrates by chemical bath deposition. The present study detailed investigated the effect of rare-earth metal-doped ZnO on NH
3
gas sensing. X-ray diffraction analysis indicated that the incorporated rare-earth metal ions substitute Zn sites in the ZnO lattice. Dimension of ZnO films decreased with rare-earth metal doping which detected from surface morphology images. The response of 100 ppb NH
3
gas was calculated to be 0.80 (200 °C), 14.00 (90 °C), 17.00 (50 °C), and 10.00 (120 °C) for the pure, Y-, Ru-, and Cs-doped ZnO films, respectively. In addition, the response of 15 ppm NH
3
gas at room temperature was calculated to be 0.20, 27.00, 57.00, and 18.00 for undoped Y-, Ru-, and Cs-doped ZnO films, respectively.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-020-03554-w</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Ammonia ; Cesium ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Gas sensors ; Image detection ; Materials Science ; Mathematical analysis ; Morphology ; Optical and Electronic Materials ; Rare earth elements ; Room temperature ; Ruthenium ; Substrates ; Thin films ; Tin dioxide ; Yttrium ; Zinc oxide</subject><ispartof>Journal of materials science. Materials in electronics, 2020-07, Vol.31 (13), p.10084-10095</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2020</rights><rights>Springer Science+Business Media, LLC, part of Springer Nature 2020.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c356t-3a78bca6d691f9809e0810dc091590f198529322f8b8b36ea5b01c1a8889e0a73</citedby><cites>FETCH-LOGICAL-c356t-3a78bca6d691f9809e0810dc091590f198529322f8b8b36ea5b01c1a8889e0a73</cites><orcidid>0000-0003-3786-3865</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Sarf, Fatma</creatorcontrib><creatorcontrib>Karaduman Er, Irmak</creatorcontrib><creatorcontrib>Yakar, Emin</creatorcontrib><creatorcontrib>Acar, Selim</creatorcontrib><title>The role of rare-earth metal (Y, Ru and Cs)-doped ZnO thin films in NH3 gas sensing performances at room temperature</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>Pure and rare-earth metal [Yttrium (Y), Ruthenium (Ru) and Caesium (Cs)]-doped ZnO thin films were deposited onto In-doped SnO
2
substrates by chemical bath deposition. The present study detailed investigated the effect of rare-earth metal-doped ZnO on NH
3
gas sensing. X-ray diffraction analysis indicated that the incorporated rare-earth metal ions substitute Zn sites in the ZnO lattice. Dimension of ZnO films decreased with rare-earth metal doping which detected from surface morphology images. The response of 100 ppb NH
3
gas was calculated to be 0.80 (200 °C), 14.00 (90 °C), 17.00 (50 °C), and 10.00 (120 °C) for the pure, Y-, Ru-, and Cs-doped ZnO films, respectively. In addition, the response of 15 ppm NH
3
gas at room temperature was calculated to be 0.20, 27.00, 57.00, and 18.00 for undoped Y-, Ru-, and Cs-doped ZnO films, respectively.</description><subject>Ammonia</subject><subject>Cesium</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Gas sensors</subject><subject>Image detection</subject><subject>Materials Science</subject><subject>Mathematical analysis</subject><subject>Morphology</subject><subject>Optical and Electronic Materials</subject><subject>Rare earth elements</subject><subject>Room temperature</subject><subject>Ruthenium</subject><subject>Substrates</subject><subject>Thin films</subject><subject>Tin dioxide</subject><subject>Yttrium</subject><subject>Zinc oxide</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWD_-gKcBLwpGJ8lmNzlK8QtEQRTUS0h3Z9tKd7cmKeK_N1rBm6cZhud9Bx7GDgSeCsTqLAo0uuAokaPSefvYYCOhK8ULI5832QitrnihpdxmOzG-IWJZKDNi6XFGEIYFwdBC8IE4-ZBm0FHyCzh6OYGHFfi-gXE85s2wpAZe-3tIs3kP7XzRRcjL3bWCqY8QqY_zfgpLCu0QOt_XFMGn3D90kKjLd59WgfbYVusXkfZ_5y57urx4HF_z2_urm_H5La-VLhNXvjKT2pdNaUVrDVpCI7Cp0QptsRXWaGmVlK2ZmIkqyesJilp4Y0xGfaV22eG6dxmG9xXF5N6GVejzSycLUWKhJNpMyTVVhyHGQK1bhnnnw6cT6L7turVdl-26H7vuI4fUOhQz3E8p_FX_k_oC75N8AA</recordid><startdate>20200701</startdate><enddate>20200701</enddate><creator>Sarf, Fatma</creator><creator>Karaduman Er, Irmak</creator><creator>Yakar, Emin</creator><creator>Acar, Selim</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><orcidid>https://orcid.org/0000-0003-3786-3865</orcidid></search><sort><creationdate>20200701</creationdate><title>The role of rare-earth metal (Y, Ru and Cs)-doped ZnO thin films in NH3 gas sensing performances at room temperature</title><author>Sarf, Fatma ; Karaduman Er, Irmak ; Yakar, Emin ; Acar, Selim</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c356t-3a78bca6d691f9809e0810dc091590f198529322f8b8b36ea5b01c1a8889e0a73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Ammonia</topic><topic>Cesium</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Gas sensors</topic><topic>Image detection</topic><topic>Materials Science</topic><topic>Mathematical analysis</topic><topic>Morphology</topic><topic>Optical and Electronic Materials</topic><topic>Rare earth elements</topic><topic>Room temperature</topic><topic>Ruthenium</topic><topic>Substrates</topic><topic>Thin films</topic><topic>Tin dioxide</topic><topic>Yttrium</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sarf, Fatma</creatorcontrib><creatorcontrib>Karaduman Er, Irmak</creatorcontrib><creatorcontrib>Yakar, Emin</creatorcontrib><creatorcontrib>Acar, Selim</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central</collection><collection>Advanced Technologies & Aerospace Database (1962 - current)</collection><collection>AUTh Library subscriptions: ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ProQuest advanced technologies & aerospace journals</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials science collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sarf, Fatma</au><au>Karaduman Er, Irmak</au><au>Yakar, Emin</au><au>Acar, Selim</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The role of rare-earth metal (Y, Ru and Cs)-doped ZnO thin films in NH3 gas sensing performances at room temperature</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2020-07-01</date><risdate>2020</risdate><volume>31</volume><issue>13</issue><spage>10084</spage><epage>10095</epage><pages>10084-10095</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>Pure and rare-earth metal [Yttrium (Y), Ruthenium (Ru) and Caesium (Cs)]-doped ZnO thin films were deposited onto In-doped SnO
2
substrates by chemical bath deposition. The present study detailed investigated the effect of rare-earth metal-doped ZnO on NH
3
gas sensing. X-ray diffraction analysis indicated that the incorporated rare-earth metal ions substitute Zn sites in the ZnO lattice. Dimension of ZnO films decreased with rare-earth metal doping which detected from surface morphology images. The response of 100 ppb NH
3
gas was calculated to be 0.80 (200 °C), 14.00 (90 °C), 17.00 (50 °C), and 10.00 (120 °C) for the pure, Y-, Ru-, and Cs-doped ZnO films, respectively. In addition, the response of 15 ppm NH
3
gas at room temperature was calculated to be 0.20, 27.00, 57.00, and 18.00 for undoped Y-, Ru-, and Cs-doped ZnO films, respectively.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-020-03554-w</doi><tpages>12</tpages><orcidid>https://orcid.org/0000-0003-3786-3865</orcidid></addata></record> |
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subjects | Ammonia Cesium Characterization and Evaluation of Materials Chemistry and Materials Science Gas sensors Image detection Materials Science Mathematical analysis Morphology Optical and Electronic Materials Rare earth elements Room temperature Ruthenium Substrates Thin films Tin dioxide Yttrium Zinc oxide |
title | The role of rare-earth metal (Y, Ru and Cs)-doped ZnO thin films in NH3 gas sensing performances at room temperature |
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