Simulation Methodology for Electron Transfer in CMOS Quantum Dots

The construction of quantum computer simulators requires advanced software which can capture the most significant characteristics of the quantum behavior and quantum states of qubits in such systems. Additionally, one needs to provide valid models for the description of the interface between classic...

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Bibliographic Details
Published in:arXiv.org 2020-06
Main Authors: Sokolov, Andrii, Mishagli, Dmytro, Giounanlis, Panagiotis, Bashir, Imran, Leipold, Dirk, Koskin, Eugene, R Bogdan Staszewski, Blokhina, Elena
Format: Article
Language:English
Subjects:
Circuits
CMOS
Computer simulation
Differential equations
Electron transfer
Electron transport
Mathematical models
Numerical methods
Ordinary differential equations
Quantum computers
Quantum dots
Qubits (quantum computing)
Schrodinger equation
Simulators
Time dependence
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Summary:The construction of quantum computer simulators requires advanced software which can capture the most significant characteristics of the quantum behavior and quantum states of qubits in such systems. Additionally, one needs to provide valid models for the description of the interface between classical circuitry and quantum core hardware. In this study, we model electron transport in semiconductor qubits based on an advanced CMOS technology. Starting from 3D simulations, we demonstrate an order reduction and the steps necessary to obtain ordinary differential equations on probability amplitudes in a multi-particle system. We compare numerical and semi-analytical techniques concluding this paper by examining two case studies: the electron transfer through multiple quantum dots and the construction of a Hadamard gate simulated using a numerical method to solve the time-dependent Schrodinger equation and the tight-binding formalism for a time-dependent Hamiltonian.
ISSN:2331-8422
DOI:10.48550/arxiv.2006.14103