YBCO-based non-volatile ReRAM tested in Low Earth Orbit

• Published in: arXiv.org 2020-06
• Main Authors: Acha, C, Barella, M, Sanca, G A, F Gomez Marlasca, Huhtinen, H, Paturi, P, Levy, P, Golmar, F
• Format: Article
• Language: English
• Subjects: Controllers; Current voltage characteristics; Drift; Ionizing radiation; Launching; Low earth orbits; Memory devices; Reliability aspects; Small satellites; Thermal cycling
• ISSN: 2331-8422
• DOI: 10.48550/arxiv.2006.15062

An YBCO-based test structure corresponding to the family of ReRAM devices associated with the valence change mechanism is presented. We have characterized its electrical response previous to its lift-off to a Low Earth Orbit (LEO) using standard electronics and also with the dedicated LabOSat-01 controller. Similar results were obtained in both cases. After about 200 days at LEO on board a small satellite, electrical tests started on the memory device using the LabOSat-01 controller. We discuss the results of the first 150 tests, performed along a 433-day time interval in space. The memory device remained operational despite the hostile conditions that involved launching, lift-off vibrations, permanent thermal cycling and exposure to ionizing radiation, with doses 3 orders of magnitude greater than the usual ones on Earth. The device showed resistive switching and IV characteristics similar to those measured on Earth, although with changes that follow a smooth drift in time. A detailed study of the electrical transport mechanisms, based on previous models that indicate the existence of various conducting mechanisms through the metal-YBCO interface showed that the observed drift can be associated with a local temperature drift at the LabOSat controller, with no clear evidence that allows determining changes in the underlying microscopic factors. These results show the reliability of complex-oxide non-volatile ReRAM-based devices in order to operate under all the hostile conditions encountered in space-borne applications.