Iron Losses and Magnetic-Hysteresis Properties Under GaN Inverter Excitation at High-Frequencies

  Many researchers have investigated the magnetic properties of magnetic cores in order to reduce iron losses in power-electronic systems. Wide bandgap power-semiconductor devices (silicon carbide (SiC) and gallium nitride (GaN)) with high-speed switching characteristics have been studied. Here, we...

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Bibliographic Details
Published in:Journal of the Magnetics Society of Japan 2020/07/01, Vol.44(4), pp.87-90
Main Authors: Yao, A., Moriyama, R., Hatakeyama, T.
Format: Article
Language:English
Subjects:
B-H loop
Carrier frequencies
Core loss
Electronic systems
Excitation
Gallium nitrides
GaN
high-frequency
high-speed switching
Injection molding
inverter
Inverters
Iron loss
Magnetic cores
Magnetic materials
Magnetic properties
Magnetism
Power semiconductor devices
Silicon carbide
Waveforms
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Summary:  Many researchers have investigated the magnetic properties of magnetic cores in order to reduce iron losses in power-electronic systems. Wide bandgap power-semiconductor devices (silicon carbide (SiC) and gallium nitride (GaN)) with high-speed switching characteristics have been studied. Here, we examine the iron losses and magnetic B-H loop properties of magnetic materials under excitation with a GaN inverter at high carrier frequencies on the order of MHz. We find that the magnetic B-H loops include minor loops due to the magnetic materials even at such high carrier frequencies. We show that the iron losses increase at high carrier frequencies due to distortions of the voltage waveform.
ISSN:1882-2924
1882-2932
DOI:10.3379/msjmag.2007L002