Generalized CVD Diagram of the Si–C–N–H–Не(Ar) System

Silicon carbonitride (SiC x N y ) films have useful properties and thereby wide potential for practical use. Methods for the preparation of bulk and film SiC x N y -based materials are intensively developing. Here, we consider the preparation of such films by chemical vapor deposition (CVD) using or...

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Bibliographic Details
Published in:Russian journal of inorganic chemistry 2020-06, Vol.65 (6), p.898-904
Main Authors: Shestakov, V. A., Kosyakov, V. I., Kosinova, M. L.
Format: Article
Language:English
Subjects:
Ammonia
Chemical vapor deposition
Chemistry
Chemistry and Materials Science
Equilibrium conditions
Helium
Inorganic Chemistry
Organosilicon compounds
Physicochemical Analysis of Inorganic Systems
Rare gases
Reagents
Silicon carbonitride
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Summary:Silicon carbonitride (SiC x N y ) films have useful properties and thereby wide potential for practical use. Methods for the preparation of bulk and film SiC x N y -based materials are intensively developing. Here, we consider the preparation of such films by chemical vapor deposition (CVD) using organosilicon compounds as precursors. Additional components of the input gases are NH 3 and N 2 as reagents and an inert gas (He or Ar). The principles of thermodynamic calculations of the CVD process occurring under quasi-equilibrium conditions are analyzed. A generalized CVD diagram for the Si–C–N–H–He(Ar) system having excessive carbon has been designed in the area of deposition parameters where p = 0.01–10 Torr, T = 600–1400 K, and n (N)/ n (Si) = 1–10. This diagram will be useful in experimental studies of the Si–C–N–H–He(Ar) system.
ISSN:0036-0236
1531-8613
DOI:10.1134/S0036023620060212