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High-Gain Ultraviolet Avalanche Photodiodes Using a ZnSe-Based Organic–Inorganic Hybrid Structure

We have developed high-gain and highly sensitive ZnSe-based organic–inorganic hybrid ultraviolet avalanche photodiodes (UV-APDs). The inorganic ZnSe-based wafers (i-ZnSSe active layer/n-ZnSSe) were grown by molecular beam epitaxy (MBE) on n -type GaAs substrates. The inorganic UV-transparent conduct...

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Bibliographic Details
Published in:Journal of electronic materials 2020-08, Vol.49 (8), p.4589-4593
Main Authors: Ichikawa, Yuki, Tanaka, Keita, Nakagawa, Kazuki, Fujii, Yuta, Yoshida, Kentaro, Nakamura, Kaiki, Miyazaki, Ryuichi, Abe, Tomoki, Kasada, Hirofumi, Ichino, Kunio, Akaiwa, Kazuaki
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Language:English
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Summary:We have developed high-gain and highly sensitive ZnSe-based organic–inorganic hybrid ultraviolet avalanche photodiodes (UV-APDs). The inorganic ZnSe-based wafers (i-ZnSSe active layer/n-ZnSSe) were grown by molecular beam epitaxy (MBE) on n -type GaAs substrates. The inorganic UV-transparent conducting polymer window layers of poly 3,4-ethylenedioxythiophene:poly-styrenesulfonate (PEDOT:PSS) were formed by spin-coating and a photolithography technique instead of the inkjet printing technique, which we previously reported. We have obtained a thin uniform window layer with a mesa-shaped edge by an optimized photolithography process. The leakage current before the breakdown voltage was suppressed to
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-020-07970-w