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High-Gain Ultraviolet Avalanche Photodiodes Using a ZnSe-Based Organic–Inorganic Hybrid Structure
We have developed high-gain and highly sensitive ZnSe-based organic–inorganic hybrid ultraviolet avalanche photodiodes (UV-APDs). The inorganic ZnSe-based wafers (i-ZnSSe active layer/n-ZnSSe) were grown by molecular beam epitaxy (MBE) on n -type GaAs substrates. The inorganic UV-transparent conduct...
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Published in: | Journal of electronic materials 2020-08, Vol.49 (8), p.4589-4593 |
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Main Authors: | , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We have developed high-gain and highly sensitive ZnSe-based organic–inorganic hybrid ultraviolet avalanche photodiodes (UV-APDs). The inorganic ZnSe-based wafers (i-ZnSSe active layer/n-ZnSSe) were grown by molecular beam epitaxy (MBE) on
n
-type GaAs substrates. The inorganic UV-transparent conducting polymer window layers of poly 3,4-ethylenedioxythiophene:poly-styrenesulfonate (PEDOT:PSS) were formed by spin-coating and a photolithography technique instead of the inkjet printing technique, which we previously reported. We have obtained a thin uniform window layer with a mesa-shaped edge by an optimized photolithography process. The leakage current before the breakdown voltage was suppressed to |
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ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-020-07970-w |