Optical Studies of Molecular-Beam Epitaxy-Grown Hg1−xCdxTe with x = 0.7–0.8

Optical transmission, photoluminescence and photoconductivity were used to study Hg 1− x Cd x Te with x  = 0.7–0.8 (bandgap 0.8–1.1 eV at 300 K) grown by molecular-beam epitaxy. The studied material, which included layers used as spacers and barriers in potential- and quantum-well structures, showed...

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Bibliographic Details
Published in:Journal of electronic materials 2020-08, Vol.49 (8), p.4642-4646
Main Authors: Mynbaev, K. D., Smirnov, A. M., Bazhenov, N. L., Mikhailov, N. N., Remesnik, V. G., Yakushev, M. V.
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Electronics and Microelectronics
Energy gap
Epitaxial growth
Instrumentation
Materials Science
Mercury cadmium tellurides
Molecular beam epitaxy
Optical and Electronic Materials
Optical properties
Optimization
Photoconductivity
Photoluminescence
Quantum wells
Solid State Physics
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Summary:Optical transmission, photoluminescence and photoconductivity were used to study Hg 1− x Cd x Te with x  = 0.7–0.8 (bandgap 0.8–1.1 eV at 300 K) grown by molecular-beam epitaxy. The studied material, which included layers used as spacers and barriers in potential- and quantum-well structures, showed a considerable degree of alloy disorder similar to narrower-bandgap HgCdTe grown by the same method. The observed disorder seemed to have no effect on the structural properties of the material and its optical absorption. Optimization of the growth technology of wider-bandgap HgCdTe should help improve the quality of potential- and quantum-well structures based on this material.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-020-08160-4