Micro‐Transfer‐Printed III‐V‐on‐Silicon C‐Band Semiconductor Optical Amplifiers

The micro‐transfer‐printing of prefabricated C‐band semiconductor optical amplifiers (SOAs) on a silicon waveguide circuit is reported. The SOAs are 1.35 mm in length and 40 µm in width. Dense arrays of III‐V SOAs are fabricated on the source InP wafer. These can then be micro‐transfer‐printed on th...

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Bibliographic Details
Published in:Laser & photonics reviews 2020-07, Vol.14 (7), p.n/a
Main Authors: Haq, Bahawal, Kumari, Sulakshna, Van Gasse, Kasper, Zhang, Jing, Gocalinska, Agnieszka, Pelucchi, Emanuele, Corbett, Brian, Roelkens, Gunther
Format: Article
Language:English
Subjects:
Bias
C band
Circuit design
Confinement
Design factors
Group III-V semiconductors
heterogenous integration
Light amplifiers
Photonics
Prefabrication
Quantum wells
Saturation
Semiconductor optical amplifiers
Silicon
SOA
SOI (semiconductors)
transfer printing
Waveguides
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Summary:The micro‐transfer‐printing of prefabricated C‐band semiconductor optical amplifiers (SOAs) on a silicon waveguide circuit is reported. The SOAs are 1.35 mm in length and 40 µm in width. Dense arrays of III‐V SOAs are fabricated on the source InP wafer. These can then be micro‐transfer‐printed on the target SOI photonic circuits in a massively parallel fashion. Additionally, this approach allows for greater flexibility in terms of integrating different epitaxial layer structures on the same SOI waveguide circuit. The technique allows integrating SOAs on a complex silicon photonic circuit platform without changing the foundry process‐flow. Two different SOA designs with different optical confinement factor in the quantum wells of the III‐V waveguide are discussed. This allows tuning the small‐signal gain and output saturation power of the SOA. The design with higher optical confinement in the quantum wells has a small‐signal gain of up to 23 dB and an on‐chip saturation power of 9.2 mW at 140 mA bias current and the lower optical confinement factor design has a small‐signal gain of 17 dB and power saturation of 15 mW at 160 mA of bias current. The micro‐transfer‐printing of pre‐fabricated C‐band SOAs on Si photonic integrated circuit is demonstrated. Two designs are presented, with a trade‐off in small signal gain and output saturation power. An alignment tolerant taper structure is designed that can cope with 1.0–1.5 µm lateral misalignment. Small‐signal gains, of 23 dB and 17 dB, are demonstrated.
ISSN:1863-8880
1863-8899
DOI:10.1002/lpor.201900364