Formation of SiC Mesastructures with Gently Sloping Sidewalls by Dry Selective Etching through a Photoresist Mask

• Published in: Technical physics 2020-06, Vol.65 (6), p.957-960
• Main Authors: Lebedeva, N. M., Samsonova, T. P., Il’inskaya, N. D., Troshkov, S. I., Ivanov, P. A.
• Format: Article
• Language: English
• Subjects: Classical and Continuum Physics; Etching; Inductively coupled plasma; Nitrogen fluorides; Parameters; Photolithography; Photoresists; Physics; Physics and Astronomy; Reactive ion etching; Selectivity; Silicon; Silicon carbide; Solid State Electronics; Wafers; Wedges
• ISSN: 1063-7842; 1090-6525
• DOI: 10.1134/S1063784220060195

We have demonstrated that SiC mesastructures with gently sloping sidewalls form with the help of selective reactive ion etching (RIE) of silicon carbide through a photoresist mask (slanted walls are formed during simultaneous etching of SiC and the resistive mask with the edge in the shape of a sharp wedge). A simple geometrical model of etching predicts that the resultant slope of the mesastructure wall must be specified by two parameters, i.e., initial angle of the resistive wedge and the selectivity of SiC etching relative to the photoresist (ratio of etching rates of SiC and photoresist). For experiments, we used polished 4 H –SiC wafers with the (0001) orientation. Photoresist regions with an edge angle of 22° were deposited using photolithography onto the Si side of the wafers. Then etching of mesastructures was performed in nitrogen trifluoride in a setup with an inductively coupled plasma. We selected RIE parameters ensuring SiC and photoresist etching with rates of 55 and 160 nm/min, respectively (etching selectivity was 1 : 3). The SiC mesastructures formed by etching have a height of 3.2 μm and gently sloping sidewalls with a slope of about 8°. This technology can be used for preparing high-voltage SiC devices with a straight bevel.