Surface emitting 1.5 µm multi-quantum well LED on epitaxial lateral overgrowth InP/Si

We demonstrate a surface emitting 1.5 µm multi-quantum well (MQW) light-emitting diode (LED) on a 3-inch epitaxial lateral overgrowth (ELOG) InP/Si wafer. The enhanced crystalline quality of ELOG InP/Si is revealed by various characterization techniques, which gives rise to a MQW with high photolumi...

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Bibliographic Details
Published in:Optical materials express 2020-07, Vol.10 (7), p.1714
Main Authors: Omanakuttan, Giriprasanth, Sun, Yan-Ting, Hedlund, Carl Reuterskiöld, Junesand, Carl, Schatz, Richard, Lourdudoss, Sebastian, Pillard, Valerie, Lelarge, François, Browne, Jack, Justice, John, Corbett, Brian
Format: Article
Language:English
Subjects:
Electroluminescence
Fabry-Perot interferometers
Indium phosphides
Interference fringes
Light emitting diodes
Multi Quantum Wells
Optimization
Photoluminescence
Silicon
Surface emitting lasers
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Summary:We demonstrate a surface emitting 1.5 µm multi-quantum well (MQW) light-emitting diode (LED) on a 3-inch epitaxial lateral overgrowth (ELOG) InP/Si wafer. The enhanced crystalline quality of ELOG InP/Si is revealed by various characterization techniques, which gives rise to a MQW with high photoluminescence intensity at 1.5 µm and interference fringes arising from the vertical Fabry-Perot cavity. The LED devices exhibited strong electroluminescence intensity that increased with pump current. Moreover, transparency current measurements indicate optical gain in the 1.5 µm MQW on InP/Si. The results are encouraging for obtaining wafer scale 1.5 µm surface emitting laser structures on silicon with further optimization.
ISSN:2159-3930
2159-3930
DOI:10.1364/OME.395249