Optical spin initialization of spin-3/2 silicon vacancy centers in 6H-SiC at room temperature

Silicon vacancies in silicon carbide have been proposed as an alternative to nitrogen vacancy centers in diamonds for spintronics and quantum technologies. An important precondition for these applications is the initialization of the qubits into a specific quantum state. In this work, we study the o...

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Bibliographic Details
Published in:arXiv.org 2021-03
Main Authors: Singh, Harpreet, Anisimov, Andrei N, Breev, I D, Baranov, Pavel G, Suter, Dieter
Format: Article
Language:English
Subjects:
Diamonds
Lattice vacancies
Magnetic resonance
Qubits (quantum computing)
Rate constants
Relaxation time
Room temperature
Silicon
Silicon carbide
Spin-lattice relaxation
Spintronics
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Summary:Silicon vacancies in silicon carbide have been proposed as an alternative to nitrogen vacancy centers in diamonds for spintronics and quantum technologies. An important precondition for these applications is the initialization of the qubits into a specific quantum state. In this work, we study the optical alignment of the spin 3/2 negatively charged silicon vacancy in 6H-SiC. Using a time-resolved optically detected magnetic resonance technique, we coherently control the silicon vacancy spin ensemble and measure Rabi frequencies and spin-lattice relaxation time of all three transitions. Then to study the optical initialization process of the silicon vacancy spin ensemble, the vacancy spin ensemble is prepared in different ground states and optically excited. We describe a simple rate equation model that can explain the observed behaviour and determine the relevant rate constants.
ISSN:2331-8422
DOI:10.48550/arxiv.2007.08516