Epitaxial Growth of Bulk Semipolar AlN Films on Si(001) and Hybrid SiC/Si(001) Substrates

The possibility of growing bulk (more than 7 μm thick) epitaxial semipolar AlN films on Si(001) and hybrid SiC/Si(001) substrates without cracks has been investigated. It is found that an AlN layer grown on the Si substrate is extended, whereas an AlN layer grown on the hybrid SiC/Si substrate is co...

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Bibliographic Details
Published in:Technical physics letters 2020-06, Vol.46 (6), p.539-542
Main Authors: Kukushkin, S. A., Osipov, A. V., Redkov, A. V., Sharofidinov, Sh. Sh
Format: Article
Language:English
Subjects:
Classical and Continuum Physics
Cracks
Epitaxial growth
Exfoliation
Film thickness
Physics
Physics and Astronomy
Silicon carbide
Silicon substrates
Thick films
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Summary:The possibility of growing bulk (more than 7 μm thick) epitaxial semipolar AlN films on Si(001) and hybrid SiC/Si(001) substrates without cracks has been investigated. It is found that an AlN layer grown on the Si substrate is extended, whereas an AlN layer grown on the hybrid SiC/Si substrate is compressed. The limiting (critical) thickness of the semipolar AlN layer on the Si(001) substrate is determined to be ~7.5 μm. When the film thickness exceeds this value, an ensemble of cracks is formed in the film, leading to its total cracking and exfoliation from the substrate. The semipolar epitaxial AlN films with a thickness of more than 40 μm are grown on hybrid SiC/Si substrates without cracking and exfoliation from the substrate.
ISSN:1063-7850
1090-6533
DOI:10.1134/S106378502006005X