Analog IGZO Memristor With Extended Capabilities

In this paper an IGZO memristor with multiple states and analog tuning extended capability is reported. The device has a planar structure and is fabricated by magnetron sputtering on glass substrate. The device resistance could be gradually increased and decreased within the range of one order of ma...

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2020, Vol.8, p.695-700
Main Authors: Dumitru, V., Besleaga, C., Ionescu, O. N.
Format: Article
Language:English
Subjects:
Artificial neural networks
Cryptography
electronic synapse
Glass substrates
IGZO
Immune system
Indium gallium zinc oxide
Ions
Magnetron sputtering
Memristor
Memristors
Performance evaluation
Planar structures
Resistance
Switches
Voltage measurement
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Summary:In this paper an IGZO memristor with multiple states and analog tuning extended capability is reported. The device has a planar structure and is fabricated by magnetron sputtering on glass substrate. The device resistance could be gradually increased and decreased within the range of one order of magnitude. Larger resistance changes are also possible but they are mostly irreversible. The obtained memristor looks promising to be used as electronic synapse in hardware implemented artificial neural networks or for applications in analog computing and cryptography.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2020.3006000