A comparative study on theoretical and experimental methods using basic electrical parameters of Au/CNTs/lnP/Au–Ge diodes

In this study, we have reported experiments on interlayer performance of single and multi walled carbon nanotubes (SWCNTs and MWCNTs) for fabrication of n-InP substrates based diode applications and characterized with various methods to obtain ideal parameters. Structural and morphological propertie...

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Bibliographic Details
Published in:Journal of alloys and compounds 2020-05, Vol.824, p.153899, Article 153899
Main Authors: Saraç, Y., Şener, S.Ş., Baltakesmez, A., Güzeldir, B., Sağlam, M.
Format: Article
Language:English
Subjects:
Comparative studies
Current voltage characteristics
Different methods
Diodes
Evolutionary algorithms
Experimental methods
Indium phosphides
Interlayers
Multi wall carbon nanotubes
Numerical methods
Parameters
Parameters determination
Raman spectroscopy
Schottky barrier diode
Single and multi walled carbon nanotubes
Single wall carbon nanotubes
Substrates
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Summary:In this study, we have reported experiments on interlayer performance of single and multi walled carbon nanotubes (SWCNTs and MWCNTs) for fabrication of n-InP substrates based diode applications and characterized with various methods to obtain ideal parameters. Structural and morphological properties of the nanotubes have been investigated by X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy (SEM) measurements, respectively. The Au/SWCNTs/n-InP and Au/MWCNTs/n-InP diodes have been prepared at the same conditions and electrically analyzed in the temperature range of 80–320 K by steps of 20 K, using forward bias current-voltage (I–V) characteristics. In characterization stage, various methods such as standard, analytical, evolutionary algorithm and numerical methods have been used to determine the ideality factor, barrier height and series resistance values of the diodes. The performance of the methods was compared in their classes and it was tried to find solutions more easily than the others. •The structural and morphological properties of the CNTs were presented.•The CNTs[2–6] were used in diode applications.•The standard, analytical, evolutionary algorithm and numerical methods were used for the determination of key performance parameters.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2020.153899