RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band

We report the RF power results of Sc(Al,Ga)N/GaN high electron mobility transistors (HEMTs). We show dc, small-signal RF and load-pull performance at 30 GHz with two barrier alloys-a ternary of ScAlN and a quaternary of ScAlGaN. The active layers are grown by molecular beam epitaxy on a GaN-on-SiC t...

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Bibliographic Details
Published in:IEEE electron device letters 2020-08, Vol.41 (8), p.1181-1184
Main Authors: Green, Andrew J., Moser, Neil, Miller, Nicholas C., Liddy, Kyle J., Lindquist, Miles, Elliot, Michael, Gillespie, James K., Fitch, Robert C., Gilbert, Ryan, Walker, Dennis E., Werner, Elizabeth, Crespo, Antonio, Beam, Edward, Xie, Andy, Lee, Cathy, Cao, Yu, Chabak, Kelson D.
Format: Article
Language:English
Subjects:
dispersion
Extremely high frequencies
Gallium nitride
GaN
HEMT
HEMTs
High electron mobility transistors
large-signal
Logic gates
Maximum power
MODFETs
Molecular beam epitaxial growth
Performance evaluation
Radio frequency
ScAlGaN
ScAlN
Semiconductor devices
small-signal
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Summary:We report the RF power results of Sc(Al,Ga)N/GaN high electron mobility transistors (HEMTs). We show dc, small-signal RF and load-pull performance at 30 GHz with two barrier alloys-a ternary of ScAlN and a quaternary of ScAlGaN. The active layers are grown by molecular beam epitaxy on a GaN-on-SiC template. The Sc(Al,Ga)N HEMTs with 120 nm gate length achieve transconductance >700 mS/mm and >70 GHz cutoff frequency. The quaternary ScAlGaN sample shows reduced current collapse during pulsed I-V and load-pull characterization. The ScAlGaN HEMT delivers 5.77 W/mm output power (VD = 20 V) and 47% power-added efficiency (VD = 15 V) when tuned for maximum power and efficiency, respectively.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2020.3006035