3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

This work demonstrates five-channel AlGaN/ GaN Schottky barrier diodes (SBDs) fabricated on a 4-inch wafer with a sheet resistance of 115 Ω/sq. A novel edge termination based on regrown p-GaN is proposed to manage the electric field crowding in the Schottky contact region. A new self-aligned Ohmic p...

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Bibliographic Details
Published in:IEEE electron device letters 2020-08, Vol.41 (8), p.1177-1180
Main Authors: Xiao, Ming, Ma, Yunwei, Cheng, Kai, Liu, Kai, Xie, Andy, Beam, Edward, Cao, Yu, Zhang, Yuhao
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Aluminum gallium nitrides
edge termination
Electric contacts
Electric fields
Figure of merit
Gallium nitride
Gallium nitrides
HEMTs
high voltage
MODFETs
multi-channel
power devices
Resists
Schottky diodes
Self alignment
self-align
Wide band gap semiconductors
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Summary:This work demonstrates five-channel AlGaN/ GaN Schottky barrier diodes (SBDs) fabricated on a 4-inch wafer with a sheet resistance of 115 Ω/sq. A novel edge termination based on regrown p-GaN is proposed to manage the electric field crowding in the Schottky contact region. A new self-aligned Ohmic process is developed to form sidewall contact to all five channels in a single lithography step. The fabricated lateral SBDs with a breakdown voltage (BV) of 1.65, 2.55, and 3.35 kV show a Baliga's figure of merit of 3.1, 3.5, and 3.6 GW/cm 2 , respectively, which are the highest among all the similarly-rated power SBDs to date. Based on experimental results, the practical limits of multi-channel AlGaN/GaN lateral devices were found to reach the theoretical vertical GaN limit at a BV over ±2 kV. This suggests the great promise of multi-channel AlGaN/GaN lateral devices for medium- and high-voltage power applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2020.3005934