STUDY OF THE EFFECT OF THE BUFFER LAYER ON THE SUBSTRATE SURFACE AND THE PROCESS MEDIUM ON NANOCLUSTER FORMATION IN THE Si1 – xGex STRUCTURE

In this paper, we report the experimental results of the effect of the initial buffer layer on the substrate surface and the process medium on the possibility and features of the formation of Si 1 –  x Ge x nanoclusters (Si, Ge, and SiGe). We proposed a mechanism for the formation of silicon, german...

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Bibliographic Details
Published in:Nanotechnologies in Russia 2019-11, Vol.14 (11-12), p.543-550
Main Authors: Strogova, A. S., Kovalevskii, A. A.
Format: Article
Language:English
Subjects:
Amorphous silicon
Buffer layers
Chemistry and Materials Science
Dysprosium
Functional and Construction Nanomaterials
Germanium
Industrial and Production Engineering
Machines
Manufacturing
Materials Science
Nanoclusters
Nanocrystals
Nanotechnology
Photovoltaic cells
Processes
Silicon nitride
Substrates
Yttrium oxide
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Summary:In this paper, we report the experimental results of the effect of the initial buffer layer on the substrate surface and the process medium on the possibility and features of the formation of Si 1 –  x Ge x nanoclusters (Si, Ge, and SiGe). We proposed a mechanism for the formation of silicon, germanium, and silicon–germanium nanoclusters on buffer layers of amorphous silicon, silicon nitride, and silicon, dysprosium, and yttrium oxides. The effect of the initial buffer layer on the substrate surface under the film deposition conditions of nanostructured silicon doped with germanium (NSS(Ge)) on the configuration, size, and surface concentration of nanocrystals is shown.
ISSN:1995-0780
1995-0799
DOI:10.1134/S1995078019060168