Effect of device parameters on improving the quantum efficiency of a lateral Si p–i–n photodetector

Quantum efficiency of CMOS compatible multi-diode lateral Si p–i–n photodetector is calculated using two-dimensional transport in the form of carrier diffusion from substrate along the vertical direction and drift along the horizontal (lateral) direction. The model verified with experimental data fr...

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Published in:Optical and quantum electronics 2020-08, Vol.52 (8), Article 371
Main Authors: Rakshit, Paulami, Das, Nikhil R.
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemical bonds
CMOS
Computer Communication Networks
Efficiency
Electrical Engineering
Lasers
Optical Devices
Optics
Parameters
Photometers
Photonics
Physics
Physics and Astronomy
Quantum efficiency
Substrates
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description Quantum efficiency of CMOS compatible multi-diode lateral Si p–i–n photodetector is calculated using two-dimensional transport in the form of carrier diffusion from substrate along the vertical direction and drift along the horizontal (lateral) direction. The model verified with experimental data from literature are used to compute and plot the quantum efficiency as a function of device parameters, such as number of diodes, trench depth, finger spacing, etc. Results show that the device parameters can be suitably chosen to improve the quantum efficiency. Possible optimum designs with respect to some parameters are also indicated for maximum quantum efficiency and maximum bandwidth-quantum efficiency product.
doi_str_mv 10.1007/s11082-020-02490-7
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subjects Characterization and Evaluation of Materials
Chemical bonds
CMOS
Computer Communication Networks
Efficiency
Electrical Engineering
Lasers
Optical Devices
Optics
Parameters
Photometers
Photonics
Physics
Physics and Astronomy
Quantum efficiency
Substrates
title Effect of device parameters on improving the quantum efficiency of a lateral Si p–i–n photodetector
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