Scattering in InAs/GaSb coupled quantum wells as a probe of higher order subband hybridization

We have performed a detailed investigation into the intersubband scattering within InAs/GaSb coupled quantum wells in the electron dominated regime. By considering the carrier mobilities and the quantum lifetime as a function of carrier density, we find that the occupation of higher order electronli...

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Bibliographic Details
Published in:Physical review. B 2020-07, Vol.102 (4), p.1, Article 045310
Main Authors: Knox, C. S., Li, L. H., Rosamond, M. C., Linfield, E. H., Marrows, C. H.
Format: Article
Language:English
Subjects:
Carrier density
Gallium antimonides
Holes (electron deficiencies)
Quantum wells
Scattering
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Summary:We have performed a detailed investigation into the intersubband scattering within InAs/GaSb coupled quantum wells in the electron dominated regime. By considering the carrier mobilities and the quantum lifetime as a function of carrier density, we find that the occupation of higher order electronlike subbands are inhibited by anticrossing with the hole subbands. We also find that, by applying a gate bias to the GaSb layer, we are able to move the electron-hole anticrossing point in energy, modulating the electronlike states that should be localized within the InAs layer.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.102.045310