Stability of ferroelectric and antiferroelectric hafnium–zirconium oxide thin films

Hafnium–zirconium oxide (HZO) thin films are of interest due to their ability to form ferroelectric (FE) and antiferroelectric (AFE) oxide phases. Density functional theory is employed to elucidate the stabilization mechanisms of both FE HZO thin films and AFE ZrO2 films. The FE orthorhombic phase i...

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Published in:Journal of applied physics 2020-08, Vol.128 (5)
Main Authors: Chae, Kisung, Hwang, Jeongwoon, Chagarov, Evgueni, Kummel, Andrew, Cho, Kyeongjae
Format: Article
Language:English
Subjects:
Antiferroelectricity
Applied physics
Density functional theory
Ferroelectric materials
Free energy
Hafnium oxide
Orthorhombic phase
Tensile strain
Thin films
Three dimensional models
Zirconium dioxide
Zirconium oxides
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cited_by cdi_FETCH-LOGICAL-c327t-15ed55683c3c9e091db0fa8ade3ce4cba4ec46d6c70611348fcbf55aae989023
cites cdi_FETCH-LOGICAL-c327t-15ed55683c3c9e091db0fa8ade3ce4cba4ec46d6c70611348fcbf55aae989023
container_end_page
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container_volume 128
creator Chae, Kisung
Hwang, Jeongwoon
Chagarov, Evgueni
Kummel, Andrew
Cho, Kyeongjae
description Hafnium–zirconium oxide (HZO) thin films are of interest due to their ability to form ferroelectric (FE) and antiferroelectric (AFE) oxide phases. Density functional theory is employed to elucidate the stabilization mechanisms of both FE HZO thin films and AFE ZrO2 films. The FE orthorhombic phase is primarily stabilized by in-plane tensile strain, which spontaneously occurs during the synthesis process, and this is more effective for HZO than HfO2. Layer-by-layer stack models and core-matrix three-dimensional models of the polymorphs reveal that the electrostatic component of interfacial free energy can play a critical role in the formation of the AFE tetragonal phase in ZrO2 and the “wake-up” effect for FE HZO.
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2430232235</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2430232235</sourcerecordid><originalsourceid>FETCH-LOGICAL-c327t-15ed55683c3c9e091db0fa8ade3ce4cba4ec46d6c70611348fcbf55aae989023</originalsourceid><addsrcrecordid>eNqd0M1KAzEQB_AgCtbqwTdY8KSwdbLZ7CZHKX5BwYP1HLL5oCnbTU1SsZ58B9_QJ3GXFsSrh2GG4ccM_BE6xzDBUJFrOgHAmJb1ARphYDyvKYVDNAIocM54zY_RSYzLATHCR-jlOcnGtS5tM28za0LwpjUqBacy2em-kvu7XUjbuc3q-_PrwwXlhznz706bLC1cl1nXruIpOrKyjeZs38dofnc7nz7ks6f7x-nNLFekqFOOqdGUVowoorgBjnUDVjKpDVGmVI0sjSorXakaKoxJyaxqLKVSGs44FGSMLnZn18G_bkxMYuk3oes_iqIkPSgKQnt1uVMq-BiDsWId3EqGrcAghtAEFfvQenu1s1G5JJPz3f_wmw-_UKy1JT_J330-</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2430232235</pqid></control><display><type>article</type><title>Stability of ferroelectric and antiferroelectric hafnium–zirconium oxide thin films</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Chae, Kisung ; Hwang, Jeongwoon ; Chagarov, Evgueni ; Kummel, Andrew ; Cho, Kyeongjae</creator><creatorcontrib>Chae, Kisung ; Hwang, Jeongwoon ; Chagarov, Evgueni ; Kummel, Andrew ; Cho, Kyeongjae</creatorcontrib><description>Hafnium–zirconium oxide (HZO) thin films are of interest due to their ability to form ferroelectric (FE) and antiferroelectric (AFE) oxide phases. Density functional theory is employed to elucidate the stabilization mechanisms of both FE HZO thin films and AFE ZrO2 films. The FE orthorhombic phase is primarily stabilized by in-plane tensile strain, which spontaneously occurs during the synthesis process, and this is more effective for HZO than HfO2. Layer-by-layer stack models and core-matrix three-dimensional models of the polymorphs reveal that the electrostatic component of interfacial free energy can play a critical role in the formation of the AFE tetragonal phase in ZrO2 and the “wake-up” effect for FE HZO.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/5.0011547</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Antiferroelectricity ; Applied physics ; Density functional theory ; Ferroelectric materials ; Free energy ; Hafnium oxide ; Orthorhombic phase ; Tensile strain ; Thin films ; Three dimensional models ; Zirconium dioxide ; Zirconium oxides</subject><ispartof>Journal of applied physics, 2020-08, Vol.128 (5)</ispartof><rights>Author(s)</rights><rights>2020 Author(s). Published under license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-15ed55683c3c9e091db0fa8ade3ce4cba4ec46d6c70611348fcbf55aae989023</citedby><cites>FETCH-LOGICAL-c327t-15ed55683c3c9e091db0fa8ade3ce4cba4ec46d6c70611348fcbf55aae989023</cites><orcidid>0000-0003-2698-7774 ; 0000-0003-1628-408X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Chae, Kisung</creatorcontrib><creatorcontrib>Hwang, Jeongwoon</creatorcontrib><creatorcontrib>Chagarov, Evgueni</creatorcontrib><creatorcontrib>Kummel, Andrew</creatorcontrib><creatorcontrib>Cho, Kyeongjae</creatorcontrib><title>Stability of ferroelectric and antiferroelectric hafnium–zirconium oxide thin films</title><title>Journal of applied physics</title><description>Hafnium–zirconium oxide (HZO) thin films are of interest due to their ability to form ferroelectric (FE) and antiferroelectric (AFE) oxide phases. Density functional theory is employed to elucidate the stabilization mechanisms of both FE HZO thin films and AFE ZrO2 films. The FE orthorhombic phase is primarily stabilized by in-plane tensile strain, which spontaneously occurs during the synthesis process, and this is more effective for HZO than HfO2. Layer-by-layer stack models and core-matrix three-dimensional models of the polymorphs reveal that the electrostatic component of interfacial free energy can play a critical role in the formation of the AFE tetragonal phase in ZrO2 and the “wake-up” effect for FE HZO.</description><subject>Antiferroelectricity</subject><subject>Applied physics</subject><subject>Density functional theory</subject><subject>Ferroelectric materials</subject><subject>Free energy</subject><subject>Hafnium oxide</subject><subject>Orthorhombic phase</subject><subject>Tensile strain</subject><subject>Thin films</subject><subject>Three dimensional models</subject><subject>Zirconium dioxide</subject><subject>Zirconium oxides</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNqd0M1KAzEQB_AgCtbqwTdY8KSwdbLZ7CZHKX5BwYP1HLL5oCnbTU1SsZ58B9_QJ3GXFsSrh2GG4ccM_BE6xzDBUJFrOgHAmJb1ARphYDyvKYVDNAIocM54zY_RSYzLATHCR-jlOcnGtS5tM28za0LwpjUqBacy2em-kvu7XUjbuc3q-_PrwwXlhznz706bLC1cl1nXruIpOrKyjeZs38dofnc7nz7ks6f7x-nNLFekqFOOqdGUVowoorgBjnUDVjKpDVGmVI0sjSorXakaKoxJyaxqLKVSGs44FGSMLnZn18G_bkxMYuk3oes_iqIkPSgKQnt1uVMq-BiDsWId3EqGrcAghtAEFfvQenu1s1G5JJPz3f_wmw-_UKy1JT_J330-</recordid><startdate>20200807</startdate><enddate>20200807</enddate><creator>Chae, Kisung</creator><creator>Hwang, Jeongwoon</creator><creator>Chagarov, Evgueni</creator><creator>Kummel, Andrew</creator><creator>Cho, Kyeongjae</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-2698-7774</orcidid><orcidid>https://orcid.org/0000-0003-1628-408X</orcidid></search><sort><creationdate>20200807</creationdate><title>Stability of ferroelectric and antiferroelectric hafnium–zirconium oxide thin films</title><author>Chae, Kisung ; Hwang, Jeongwoon ; Chagarov, Evgueni ; Kummel, Andrew ; Cho, Kyeongjae</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-15ed55683c3c9e091db0fa8ade3ce4cba4ec46d6c70611348fcbf55aae989023</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Antiferroelectricity</topic><topic>Applied physics</topic><topic>Density functional theory</topic><topic>Ferroelectric materials</topic><topic>Free energy</topic><topic>Hafnium oxide</topic><topic>Orthorhombic phase</topic><topic>Tensile strain</topic><topic>Thin films</topic><topic>Three dimensional models</topic><topic>Zirconium dioxide</topic><topic>Zirconium oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chae, Kisung</creatorcontrib><creatorcontrib>Hwang, Jeongwoon</creatorcontrib><creatorcontrib>Chagarov, Evgueni</creatorcontrib><creatorcontrib>Kummel, Andrew</creatorcontrib><creatorcontrib>Cho, Kyeongjae</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chae, Kisung</au><au>Hwang, Jeongwoon</au><au>Chagarov, Evgueni</au><au>Kummel, Andrew</au><au>Cho, Kyeongjae</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Stability of ferroelectric and antiferroelectric hafnium–zirconium oxide thin films</atitle><jtitle>Journal of applied physics</jtitle><date>2020-08-07</date><risdate>2020</risdate><volume>128</volume><issue>5</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Hafnium–zirconium oxide (HZO) thin films are of interest due to their ability to form ferroelectric (FE) and antiferroelectric (AFE) oxide phases. Density functional theory is employed to elucidate the stabilization mechanisms of both FE HZO thin films and AFE ZrO2 films. The FE orthorhombic phase is primarily stabilized by in-plane tensile strain, which spontaneously occurs during the synthesis process, and this is more effective for HZO than HfO2. Layer-by-layer stack models and core-matrix three-dimensional models of the polymorphs reveal that the electrostatic component of interfacial free energy can play a critical role in the formation of the AFE tetragonal phase in ZrO2 and the “wake-up” effect for FE HZO.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0011547</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0003-2698-7774</orcidid><orcidid>https://orcid.org/0000-0003-1628-408X</orcidid></addata></record>
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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
subjects Antiferroelectricity
Applied physics
Density functional theory
Ferroelectric materials
Free energy
Hafnium oxide
Orthorhombic phase
Tensile strain
Thin films
Three dimensional models
Zirconium dioxide
Zirconium oxides
title Stability of ferroelectric and antiferroelectric hafnium–zirconium oxide thin films
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T10%3A11%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Stability%20of%20ferroelectric%20and%20antiferroelectric%20hafnium%E2%80%93zirconium%20oxide%20thin%20films&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Chae,%20Kisung&rft.date=2020-08-07&rft.volume=128&rft.issue=5&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/5.0011547&rft_dat=%3Cproquest_cross%3E2430232235%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c327t-15ed55683c3c9e091db0fa8ade3ce4cba4ec46d6c70611348fcbf55aae989023%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2430232235&rft_id=info:pmid/&rfr_iscdi=true