Interaction of Fluorocarbon with Silicon Monoxide and Processes of SiC Nanowire Formation

A study of the processes of the thermal carbonization of silicon monoxide in the presence of nonstoichiometric carbon monofluoride demonstrated that raising the annealing temperature of mixtures of SiO and CF x powders in a quasi-closed volume to 1000°C and higher leads to the formation of whisker-l...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2020-08, Vol.54 (8), p.900-911
Main Authors: Astrova, E. V., Ulin, V. P., Parfeneva, A. V., Nashchekin, A. V., Nevedomskiy, V. N., Baidakova, M. V.
Format: Article
Language:English
Subjects:
Annealing
Carbon monoxide
Crystallization
Difluorides
Fabrication
Fluorides
Magnetic Materials
Magnetism
Nanocrystals
Nanowires
Physics
Physics and Astronomy
Powders
Silicon
Silicon carbide
Testing of Materials and Structures
Treatment
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Summary:A study of the processes of the thermal carbonization of silicon monoxide in the presence of nonstoichiometric carbon monofluoride demonstrated that raising the annealing temperature of mixtures of SiO and CF x powders in a quasi-closed volume to 1000°C and higher leads to the formation of whisker-like SiC nanocrystals. It is found that, in parallel with the known crystallization of SiC nanowires as a result of the interaction of SiO vapor with carbon monoxide, the previously undescribed interaction of CO with gas-phase silicon difluoride SiF 2 takes part in their formation. At temperatures below 1200°C, this reaction is dominant and makes the most pronounced contribution to the yield of SiC nanowires.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782620080059