Band gap reconstruction at the interface between black phosphorus and a gold electrode

We experimentally investigate charge transport through the interface between a gold electrode and a black phosphorus single crystal. The experimental dI/dV(V) curves are characterized by well developed zero-bias conductance peak and two strongly different branches. We find that two branches of asymm...

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Bibliographic Details
Published in:Physical review. B 2020-06, Vol.101 (23), p.1, Article 235316
Main Authors: Orlova, N. N., Ryshkov, N. S., Zagitova, A. A., Kulakov, V. I., Timonina, A. V., Borisenko, D. N., Kolesnikov, N. N., Deviatov, E. V.
Format: Article
Language:English
Subjects:
Bias
Charge transport
Electric fields
Electrodes
Energy gap
Gold
Phosphorus
Reconstruction
Resistance
Single crystals
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Summary:We experimentally investigate charge transport through the interface between a gold electrode and a black phosphorus single crystal. The experimental dI/dV(V) curves are characterized by well developed zero-bias conductance peak and two strongly different branches. We find that two branches of asymmetric dI/dV(V) curves correspond to different band gap limits, which is consistent with the theoretically predicted band gap reconstruction at the surface of black phosphorus under electric field. This conclusion is confirmed by experimental comparison with the symmetric curves for narrow-gap (WTe2) and wide-gap (GaSe) metal-semiconductor structures. In addition, we demonstrate p-type dopants redistribution at high bias voltages of different sign, which opens a way to use the interface structures with black phosphorus in resistive memory applications.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.101.235316