Rapid Thermal Annealing for Surface Optimisation of ZnO Substrates for MBE-Grown Oxide Two-Dimensional Electron Gases

Two-dimensional electron gases (2DEGs) at the ZnO/ZnMgO interface are promising for applications in spintronics and quantum computing due to the combination of low spin-orbit coupling and high electron mobility. Growing high mobility 2DEGs requires high quality substrates with low impurity densities...

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Bibliographic Details
Published in:arXiv.org 2020-08
Main Authors: Sparks, Matthew, Kennedy, Oscar, Warburton, Paul
Format: Article
Language:English
Subjects:
Annealing
Chemical etching
Electron mobility
Electron spin
Electrons
High temperature
Low temperature
Optimization
Photovoltaic cells
Quantum computing
Spin-orbit interactions
Spintronics
Substrates
Surface properties
Zinc oxide
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Summary:Two-dimensional electron gases (2DEGs) at the ZnO/ZnMgO interface are promising for applications in spintronics and quantum computing due to the combination of low spin-orbit coupling and high electron mobility. Growing high mobility 2DEGs requires high quality substrates with low impurity densities. In this work we demonstrate a ZnO substrate sample treatment combining high temperature rapid thermal annealing and chemical etching to improve the surface quality for the subsequent growth of 2DEGs. This process enables the growth of a 2DEG with low-temperature mobility of \(4.8\times10^4\)~cm\(^2\)V\(^{-1}\)s\(^{-1}\). An unannealed control sample shows a scattering rate at least three times greater than the annealed sample.
ISSN:2331-8422