Single crystal growth and electrical transport properties of η-Mo4O11

Single crystals of quasi-two-dimensional charge-density-wave (CDW) material η-Mo4O11 were successfully grown by chemical vapor transport (CVT) method with TeCl4 and I2 as carrier gas, respectively. The obtained crystals with TeCl4 as carrier gas have a largest size of 16 × 6 × 0.8 mm3 with high qual...

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Bibliographic Details
Published in:Journal of alloys and compounds 2020-09, Vol.835, p.155417, Article 155417
Main Authors: Ke, J.Z., Yang, M., Zuo, H.K., Zhu, H.P., Liu, C.B., Chen, R., Dong, C., Liu, W.X., Shi, M.Y., Wang, J.F.
Format: Article
Language:English
Subjects:
Anisotropy
Carrier density
Carrier gases
Charge density waves
Charge materials
Charge-density-wave
Chemical analysis
Crystal growth
Crystals
Magnetoresistance
Magnetoresistivity
Magnetotransport
Oscillations
Single crystals
Temperature dependence
Transport properties
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Summary:Single crystals of quasi-two-dimensional charge-density-wave (CDW) material η-Mo4O11 were successfully grown by chemical vapor transport (CVT) method with TeCl4 and I2 as carrier gas, respectively. The obtained crystals with TeCl4 as carrier gas have a largest size of 16 × 6 × 0.8 mm3 with high quality determined by x-ray single-crystal diffraction, chemical analysis and electrical transport measurements. Temperature dependent resistivity shows that η-Mo4O11 is of highly anisotropy and undergoes successive CDW transitions at 105 K and 30 K, consistent with early reports. It is found that η-Mo4O11 with TeCl4 as carrier gas has a relative higher Residual Resistance Ratio (RRR), carrier density and mobility than that with I2 as carrier gas. This results in a much smaller magnetoresistance but pronounced Shubnikov-de Haas oscillations, providing opportunities to study the unusual oscillations of this compound beyond the quantum limit. For the Hall resistance, a drop above 10 T is reproduced corresponding to a steep increase of magnetoresistance. •Large size single crystals of charge-density-wave material h-Mo4O11 were successfully grown by CVT with different carrier gas.•h-Mo4O11 with TeCl4 as carrier gas has a relative higher RRR, carrier density and mobility than that with I2.•Pronounced Shubnikov-de Haas oscillations and abnormal Hall effect have been observed.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2020.155417