Microwave AC voltage induced phase change in Sb\(_2\)Te\(_3\) nanowires

Scaling information bits to ever smaller dimensions is a dominant drive for information technology (IT). Nanostructured phase change material emerges as a key player in the current green-IT endeavor with low power consumption, functional modularity and promising scalability. In this work, we present...

Full description

Saved in:
Bibliographic Details
Published in:arXiv.org 2020-08
Main Authors: Pok-Lam Tse, Mugica-Sanchez, Laura, Tian, Fugu, Ruger, Oliver, Undisz, Andreas, Moethrath, George, Takahashi, Susumu, Ronning, Carsten, Lu, Jia Grace
Format: Article
Language:English
Subjects:
Electric potential
High resolution electron microscopy
Information technology
Modularity
Nanowires
Phase change materials
Power consumption
Temperature dependence
Voltage
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Scaling information bits to ever smaller dimensions is a dominant drive for information technology (IT). Nanostructured phase change material emerges as a key player in the current green-IT endeavor with low power consumption, functional modularity and promising scalability. In this work, we present the demonstration of microwave AC voltage induced phase change phenomenon at 3 GHz in single Sb\(_2\)Te\(_3\) nanowires. The resistance change by a total of 6 - 7 orders of magnitude is evidenced by a transition from the crystalline metallic to the amorphous semiconducting phase, which is cross-examined by temperature dependent transport measurement and high-resolution electron microscopy analysis. This discovery could potentially tailor multi-state information bit encoding and discrimination along a single nanowire, rendering technology advancement for neuro-inspired computing devices.
ISSN:2331-8422
DOI:10.48550/arxiv.2008.06666