Peculiarities of electron transport in SiOx films obtained by ion-plasma sputtering

The electrical conductivity of SiO x and nanocomposite SiO 2 (Si) films obtained by ion-plasma sputtering with subsequent high-temperature annealing has been investigated. On the basis of the detailed analysis of the current characteristics some electric parameters have been calculated and mechanism...

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Bibliographic Details
Published in:Applied nanoscience 2020, Vol.10 (8), p.2723-2729
Main Authors: Bratus, O. L., Evtukh, A. A., Ilchenko, V. V.
Format: Article
Language:English
Subjects:
Chemistry and Materials Science
Current voltage characteristics
Electrical resistivity
Electron transport
High temperature
Hopping conduction
Ion plasma sputtering
Materials Science
Membrane Biology
Nanochemistry
Nanocomposites
Nanotechnology
Nanotechnology and Microengineering
Original Article
Silicon dioxide
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Summary:The electrical conductivity of SiO x and nanocomposite SiO 2 (Si) films obtained by ion-plasma sputtering with subsequent high-temperature annealing has been investigated. On the basis of the detailed analysis of the current characteristics some electric parameters have been calculated and mechanisms of the electrical conductivity of the SiO x and SiO 2 (Si) films have been determined. The electrical conductivity of the films is based on the mechanism of hopping conductivity with variable-range hopping through the traps near the Fermi level (Mott’s mechanism). The minimum of current in current–voltage characteristics has been revealed in the temperature range 78–225 K. The qualitative model for explanation of the features of electron transport in SiO x and SiO 2 (Si) films has been proposed.
ISSN:2190-5509
2190-5517
DOI:10.1007/s13204-019-00988-5