Electrical properties of n-HgCdTe MIS structures with HgTe single quantum wells

• Published in: Applied nanoscience 2020, Vol.10 (8), p.2489-2494
• Main Authors: Izhnin, I. I., Syvorotka, I. I., Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Dvoretsky, S. A., Mikhailov, N. N.
• Format: Article
• Language: English
• Subjects: Chemistry and Materials Science; Current carriers; Electric potential; Electrical impedance; Electrical properties; Epitaxial growth; Materials Science; Membrane Biology; Mercury tellurides; MIS (semiconductors); Molecular beam epitaxy; Nanochemistry; Nanotechnology; Nanotechnology and Microengineering; Original Article; Quantum wells; Radiation effects; Thickness; Voltage
• ISSN: 2190-5509; 2190-5517
• DOI: 10.1007/s13204-019-01081-7

For the first time, the electrical characteristics of the metal–insulator–semiconductor (MIS) structures based on n ( p )-Hg 1− x Cd x Te grown by molecular beam epitaxy including HgTe single quantum well (SQW) with thickness of 6.5 nm were investigated. SQW significantly influences the voltage, frequency, and temperature dependencies of the admittance of the MIS structure. When the SQW thickness is less than the critical thickness, there are numerous sharp maxima in the capacitance–voltage ( C – V ) curve, and when the thickness of the well is close to the critical thickness, a wide maximum is observed in the C – V characteristics associated with overshoot of minority charge carriers from SQW. A distinction is revealed between the effect of radiation on capacitive maxima caused by the escape of charge carriers from SQW and the recharging of deep levels in the epitaxial film bulk.