Mathematical Modeling of Heat and Mass Transfer Phenomena Caused by Interaction between Electron Beams and Planar Semiconductor Multilayers

An analytical matrix method is proposed for the mathematical modeling of heat and mass transfer caused by the interaction between broad electron beams and planar semiconductor multilayers. Some possibilities of using this approach to estimating the excess minority carrier distributions in planar sem...

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Published in:Bulletin of the Russian Academy of Sciences. Physics 2020-07, Vol.84 (7), p.844-850
Main Authors: Kalmanovich, V. V., Seregina, E. V., Stepovich, M. A.
Format: Article
Language:English
Subjects:
Electron beams
Electron probes
Hadrons
Heat transfer
Heavy Ions
Mass transfer
Mathematical analysis
Mathematical models
Matrix methods
Minority carriers
Multilayers
Nuclear Physics
Physics
Physics and Astronomy
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description An analytical matrix method is proposed for the mathematical modeling of heat and mass transfer caused by the interaction between broad electron beams and planar semiconductor multilayers. Some possibilities of using this approach to estimating the excess minority carrier distributions in planar semiconductor multilayers are discussed. It is shown that the proposed matrix method allows calculation of the excess minority carrier distributions in a relatively short time with an accuracy sufficient for use in electron probe techniques.
doi_str_mv 10.3103/S1062873820070138
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subjects Electron beams
Electron probes
Hadrons
Heat transfer
Heavy Ions
Mass transfer
Mathematical analysis
Mathematical models
Matrix methods
Minority carriers
Multilayers
Nuclear Physics
Physics
Physics and Astronomy
title Mathematical Modeling of Heat and Mass Transfer Phenomena Caused by Interaction between Electron Beams and Planar Semiconductor Multilayers
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