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Influence of impurities from SiC and TiC crucible cover on directionally solidified silicon

•DS-Si ingot contamination from crucible ceramic cover was investigated.•Cover material, geometry, gas flow rate and gas composition were studied factors.•Minority carrier lifetime, resistivity, O, C and metallic impurities were compared.•TiC cover and high flow rates of pure Ar are the most benefic...

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Bibliographic Details
Published in:Journal of crystal growth 2020-07, Vol.542, p.125692, Article 125692
Main Authors: Dropka, Natasha, Buchovska, Iryna, Degenhardt, Ulrich, Kiessling, Frank M.
Format: Article
Language:English
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Summary:•DS-Si ingot contamination from crucible ceramic cover was investigated.•Cover material, geometry, gas flow rate and gas composition were studied factors.•Minority carrier lifetime, resistivity, O, C and metallic impurities were compared.•TiC cover and high flow rates of pure Ar are the most beneficial influences. To enhance the efficiency of solar cells, it is important to fully understand and weigh the contributions of various factors on the contamination of multi-crystalline silicon during directional solidification. We assessed the influence of hot zone geometry, crucible cover material, purging gas flow rate and gas composition on the concentration of oxygen, carbon and 20 metallic impurities in phosphorus-doped (n-type) multi-crystalline silicon ingot of size G1 (14 kg), as well as on its minority carrier lifetime and resistivity. Studies were performed both experimentally and by 3D CFD simulations. It was found that the crucible cover made of massive titanium carbide ceramic and high flow rates of purging gas (pure argon) are the most beneficial factors for high minority carrier lifetime and reduced red zone.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2020.125692