Stochastic Variations in Nanoscale HZO based Ferroelectric finFETs: A Synergistic Approach of READ Optimization and Hybrid Precision Mixed Signal WRITE Operation to Mitigate the Implications on DNN Applications

This paper reports a synergistic approach of READ and WRITE optimization by deploying a high-precision digital computation unit along with a low-precision ferroelectric finFET (Fe-finFETs) based analog vector-matrix multiplication block for mitigating the impact of stochastic device variations in ha...

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Bibliographic Details
Published in:arXiv.org 2021-05
Main Authors: De, Sourav, Md Aftab Baig, Bo-Han, Qiu, Hoang- Hiep Le, Po-Jung, Sung, Chun-Jung, Su, Yao- Jen Lee, Lu, Darsen
Format: Article
Language:English
Subjects:
Coercivity
Computer simulation
Electrical measurement
Ferroelectric materials
Ferroelectricity
Fins
Handwriting recognition
Inference
Neural networks
Online instruction
Optimization
Phase distribution
Silicon substrates
Statistical methods
Threshold voltage
Training
Zirconium oxides
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Summary:This paper reports a synergistic approach of READ and WRITE optimization by deploying a high-precision digital computation unit along with a low-precision ferroelectric finFET (Fe-finFETs) based analog vector-matrix multiplication block for mitigating the impact of stochastic device variations in hafnium zirconium oxide (HZO) based Fe-finFETs.
ISSN:2331-8422