On Modeling the Distributions of Minority Charge Carriers Generated by a Wide Electronic Beam in Planar Multilayer Semiconductor Structures

The paper presents the results of modeling the distributions of minority charge carriers generated by a wide electron beam in two-layer semiconductor structures. The analytical results obtained using the matrix method are compared with the results of calculations obtained using the numerical method...

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Bibliographic Details
Published in:Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2020-07, Vol.14 (4), p.713-717
Main Authors: Seregina, E. V., Kalmanovich, V. V., Stepovich, M. A.
Format: Article
Language:English
Subjects:
Cadmium
Cadmium telluride
Cadmium tellurides
Charge distribution
Chemistry and Materials Science
Current carriers
Electron beams
Gallium arsenide
Intermetallic compounds
Materials Science
Mercury tellurides
Multilayers
Numerical methods
Solid solutions
Surfaces and Interfaces
Thin Films
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Summary:The paper presents the results of modeling the distributions of minority charge carriers generated by a wide electron beam in two-layer semiconductor structures. The analytical results obtained using the matrix method are compared with the results of calculations obtained using the numerical method of finite differences. The studies are carried out for epitaxial structures of “solid solution of cadmium-mercury telluride –cadmium telluride” and two-layer gallium arsenide.
ISSN:1027-4510
1819-7094
DOI:10.1134/S1027451020040163