Angular Dependences of Silicon Sputtering by Gallium Focused Ion Beam

Angular dependences of the surface layer composition and the sputtering yield of silicon upon irradiation of the surface with a focused beam of gallium ions with an energy of 30 keV are obtained. The surface composition is analyzed by scanning Auger electron spectroscopy (SAES) and secondary ion mas...

Full description

Saved in:
Bibliographic Details
Published in:Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2020-07, Vol.14 (4), p.784-790
Main Authors: Bachurin, V. I., Zhuravlev, I. V., Pukhov, D. E., Rudy, A. S., Simakin, S. G., Smirnova, M. A., Churilov, A. B.
Format: Article
Language:English
Subjects:
Chemistry and Materials Science
Composition
Gallium
Incidence angle
Ion beams
Irradiation
Materials Science
Secondary ion mass spectrometry
Silicon
Sputtering
Surface layers
Surfaces and Interfaces
Thin Films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Angular dependences of the surface layer composition and the sputtering yield of silicon upon irradiation of the surface with a focused beam of gallium ions with an energy of 30 keV are obtained. The surface composition is analyzed by scanning Auger electron spectroscopy (SAES) and secondary ion mass spectrometry (SIMS). The sputtering yields are determined by measuring the volume of sputtering craters and irradiation doses. It is found that the content of gallium in the surface layer is about 30 at % with incidence angles close to the normal. With incidence angles greater than 30°, the concentration of gallium decreases quite sharply. The angular dependence of the sputtering yield of silicon does not correlate with the content of gallium in the surface layer and is rather well described by the cascade sputtering mechanism proposed by P. Sigmund.
ISSN:1027-4510
1819-7094
DOI:10.1134/S1027451020040229