Effect of Ar+ Ion Implantation-Induced Microstructural Modifications on Electrical Conductivity of Glass RPC Detector Materials

Argon ions with energy of 1 MeV and 500 keV are implanted at various fluences into Asahi and Saint Gobain clear float glasses used for resistive plate chamber (RPC) detector fabrication. The decreased size of voids ( V f ) in the selected glasses is interpreted as an increased short-range order of t...

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Bibliographic Details
Published in:Journal of electronic materials 2020-10, Vol.49 (10), p.5831-5839
Main Authors: Kumar, K. V. Aneesh, Ravikumar, H. B.
Format: Article
Language:English
Subjects:
Argon
Argon ions
Characterization and Evaluation of Materials
Chemistry and Materials Science
Electrical resistivity
Electronics and Microelectronics
Energy gap
Fluence
Instrumentation
Ion implantation
Leakage current
Materials Science
Optical and Electronic Materials
Resistive plate chambers
Sensors
Short range order
Silica glass
Silicon dioxide
Solid State Physics
Surface resistivity
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Summary:Argon ions with energy of 1 MeV and 500 keV are implanted at various fluences into Asahi and Saint Gobain clear float glasses used for resistive plate chamber (RPC) detector fabrication. The decreased size of voids ( V f ) in the selected glasses is interpreted as an increased short-range order of the glass structure at higher fluence of argon ion implantation. The increased local temperature influences the diffusion of argon ions via trapping in the silica glass voids for higher implantation fluence. The slight increase in bandgap energy ( E g ) in the glass RPC detector materials at higher argon ion implantation fluence observed reduced electrical conductivity. The increased energy bandgap in the float glass RPC detector samples enhanced surface resistivity, consequently reducing the leakage current.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-020-08358-6