Hopping Conduction in AgSbSe2 and (AgSbSe2)0.9(PbTe)0.1

— AgSbSe 2 and (AgSbSe 2 ) 0.9 (PbTe) 0.1 have been characterized by X-ray diffraction, differential scanning calorimetry, and temperature-dependent electric conductivity and thermoelectric power measurements in the range 80–330 K. The results demonstrate that charge transport in both materials is d...

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Bibliographic Details
Published in:Inorganic materials 2020, Vol.56 (8), p.779-784
Main Authors: Ragimov, S. S., Saddinova, A. A., Alieva, A. I., Selim-zade, R. I.
Format: Article
Language:English
Subjects:
Charge materials
Charge transport
Chemistry
Chemistry and Materials Science
Current carriers
Differential scanning calorimetry
Electrical resistivity
Hopping conduction
Industrial Chemistry/Chemical Engineering
Inorganic Chemistry
Intermetallic compounds
Materials Science
Power measurement
Temperature dependence
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Summary:— AgSbSe 2 and (AgSbSe 2 ) 0.9 (PbTe) 0.1 have been characterized by X-ray diffraction, differential scanning calorimetry, and temperature-dependent electric conductivity and thermoelectric power measurements in the range 80–330 K. The results demonstrate that charge transport in both materials is due to hopping of charge carriers between localized states. We have evaluated the temperature range of hopping conduction and the Fermi level density of localized states in these materials.
ISSN:0020-1685
1608-3172
DOI:10.1134/S0020168520080130