Singularities of the Thin AlN Layers Formation by Molecular Beam Epitaxy On 3C-SiC/Si(111) Templates with On-Axis and 4° Off-Axis Disorientation

—In this article, we studied the growth characteristics of AlN epitaxial layers on 3С-SiC/Si(111) templates at various values of atomic flux of aluminum at a constant growth temperature and a constant flow of atomic nitrogen. The AFM method was used to study the morphology of the resulting structure...

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Bibliographic Details
Published in:Mechanics of solids 2020, Vol.55 (1), p.84-89
Main Authors: Babaev, A. V., Nevolin, V. K., Statsenko, V. N., Fedotov, S. D., Tsarik, K. A.
Format: Article
Language:English
Subjects:
Aluminum
Classical Mechanics
Crystal structure
Disorientation
Epitaxial growth
Epitaxial layers
Grain structure
Molecular beam epitaxy
Physics
Physics and Astronomy
Roughness
Silicon carbide
Single crystals
Thin films
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Summary:—In this article, we studied the growth characteristics of AlN epitaxial layers on 3С-SiC/Si(111) templates at various values of atomic flux of aluminum at a constant growth temperature and a constant flow of atomic nitrogen. The AFM method was used to study the morphology of the resulting structures. The minimum roughness was achieved at a growth rate of 150 nm/h on on-axis templates, and at 90 nm/h on off-axis templates. Epitaxial layers of hexagonal AlN with root mean square roughness of less than 3 nm were obtained on 3С-SiC/Si(111) templates with a diameter of  100 mm, in which there was no grain structure. Single-crystal AlN (0002) layers with FWHM (ω‑geometry) values of about 1.4° were obtained.
ISSN:0025-6544
1934-7936
DOI:10.3103/S0025654420010045